Transistor structure and semiconductor layout structure
AssigneeNanya Technology Corporation
InventorsChing-Chia Huang, Tseng-Fu Lu, Wei-Ming Liao
Life of this patent
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Abstract
The present disclosure provides a transistor structure and a semiconductor layout structure. The transistor structure includes an active region, a buried gate structure disposed in the active region, a plurality of first dielectric layers disposed over sidewalls of the buried gate structure, and a source/drain region disposed in the active region at two opposite sides of the buried gate structure. In some embodiments, the buried gate structure includes a first portion and a second portion perpendicular to the first portion. In some embodiments, the buried gate structure is separated from the source/drain region by the first dielectric layers as viewed in a top view.
Claims20
A transistor structure comprising:
- an active region;
- a buried gate structure disposed in the active region, the buried gate structure comprising:
- a first portion;
- and
- a second portion perpendicular to the first portion;
- a plurality of first dielectric layers disposed over sidewalls of the buried gate structure;
- and
- a source/drain region disposed in the active region at two opposite sides of the buried gate structure,
- wherein the buried gate structure is separated from the source/drain region by the first dielectric layers as viewed in a top view.
A semiconductor layout structure comprising:
- a plurality of active regions surrounded by a plurality of isolation structures;
- at least one first buried gate structure disposed over the active regions and the isolation structures, the first buried gate structure comprising a plurality of first portions extending in a first direction and a plurality of third portions extending in a second direction different from the first direction;
- at least one second buried gate structure disposed over the active regions and the isolation structures, the second buried gate structure comprising a plurality of second portions parallel to the first portions in the first direction and a plurality of fourth portions parallel to the third portions in the second direction different from the first direction;
- a plurality of source regions disposed in the active regions and between the first buried gate structure and the second buried gate structure in the first direction;
- and
- a plurality of drain regions disposed in the active regions, wherein the first buried gate structure and the second buried gate structure are disposed between the drain regions in the first direction.
Dependencies are inferred from the claim text.