Stacked complementary junction FETs for analog electronic circuits
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Bahman Hekmatshoartabari, Alexander Reznicek, Jeng-Bang Yau
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Abstract
A semiconductor device comprises a substrate, a first source/drain region on the substrate, a first channel region extending vertically with respect to the substrate from the first source/drain region, a second source/drain region on the first channel region, a third source/drain region on the second source/drain region, a second channel region extending vertically with respect to the substrate from the third source/drain region, a fourth source/drain region on the second channel region, a first gate region formed around from the first channel region, and a second gate region formed around the second channel region.
Claims10
A semiconductor device, comprising:
- a substrate;
- a first junction field effect transistor (JFET) on the substrate;
- and
- a second JFET stacked on the first JFET;
- wherein the second JFET is oppositely doped from the first JFET;
- wherein the first JFET comprises:
- a first source/drain region on the substrate;
- a first channel region extending vertically with respect to the substrate from the first source/drain region;
- a second source/drain region on the first channel region;
- and
- a first gate region on at least one side of the first channel region;
- wherein the second JFET comprises:
- a third source/drain region on the second source/drain region;
- a second channel region extending vertically with respect to the substrate from the third source/drain region;
- a fourth source/drain region on the second channel region;
- and
- a second gate region on at least one side of the second channel region.
Dependencies are inferred from the claim text.