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US 10,381,347 B2Granted
Semiconductor apparatus
AssigneeNuvoton Technology Corporation
InventorsYu-Chi Chang, Wen-Ying Wen, Han-Hui Chiu
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Abstract
A semiconductor apparatus includes a high side region and a low side region, wherein the high side region includes semiconductor devices, and those semiconductor devices have at least two devices with different operating voltages. In the high side region, at least one isolation structure is located between the devices with different operating voltages to prevent short circuit between the devices.
Claims11
A semiconductor apparatus, comprising:
- a high side region and a low side region, wherein the high side region comprises:
- a plurality of semiconductor devices having low voltage devices and high voltage devices formed on a substrate, and the low voltage devices and the high voltage devices have different operating voltages;
- a first conductivity type buried layer located between the substrate and the semiconductor devices including the low voltage devices and the high voltage devices;
- and
- at least one isolation structure located between the low voltage devices and the high voltage devices and between the low voltage devices and the first conductivity type buried layer, wherein the isolation structure is a second conductivity type doped region completely surrounding the low voltage devices.
2 more elements
Dependencies are inferred from the claim text.