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US 10,381,328 B2Granted
Semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorZvi Or-Bach
Life of this patent
Estimating the term…
Abstract
A 3D semiconductor device and structure, including: a first die including first transistors and first interconnect, overlaid by a second die including second transistors and second interconnect, where the first die has a first die area and the second die has a second die area, where the first die area is at least 10% larger than the second die area, and where the second die has a thickness of less than four microns.
Claims20
A 3D semiconductor device, comprising:
- a first die comprising first transistors and first interconnect, overlaid by a second die comprising second transistors and second interconnect,
- wherein said first die has a first die area and said second die has a second die area,
- wherein said first die area is at least 10% larger than said second die area,
- wherein said second die is aligned to said first die with less than 400 nm alignment error, and
- wherein said second die comprises at least two alignment marks.
2 more elements
A 3D semiconductor device, comprising:
- a first die comprising first transistors and first interconnect, overlaid by a second die comprising second transistors and second interconnect,
- wherein said first die is sourced from a first wafer with a diameter greater than 280 mm and said second die is sourced from a second wafer with a diameter less than 240 mm,
- wherein said second die is aligned to said first die with less than 400 nm alignment error, and
- wherein said second die comprises at least two alignment marks.
1 more element
A 3D semiconductor device, comprising:
- a first die comprising first transistors and first interconnect, overlaid by a second die comprising second transistors and second interconnect,
- wherein said first die has a first die area and said second die has a second die area,
- wherein said first die area is at least 10% larger than said second die area, and
- wherein said second die comprises at least two alignment marks positioned close to said second die edge,
- wherein said second die is aligned to said first die with less than 400 nm alignment error, and
- wherein said second die has a thickness of less than four microns.
3 more elements
Dependencies are inferred from the claim text.