Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium
AssigneesNippon Steel Chemical & Material Co., Ltd., Nippon Micrometal Corporation
InventorsTetsuya Oyamada, Tomohiro Uno, Hiroyuki Deai, Daizo Oda
Life of this patent
Estimating the term…
Abstract
The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.
Claims18
A bonding wire for a semiconductor device containing one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities,
- wherein the bonding wire contains no more than 5 at % of Au.
A bonding wire for a semiconductor device containing one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance consisting essentially of Ag and incidental impurities.
Dependencies are inferred from the claim text.