Lithographacally defined vias for organic package substrate scaling

A method of forming a conductive via, comprising:

• depositing a first photoresist material over a first dielectric layer and patterning the first photoresist material to form a conductive line opening;
• forming a conductive line in the conductive line opening;
• depositing a second photoresist material over the first photoresist material, the first dielectric layer, and the conductive line;
• patterning the second photoresist material to form a via opening over the conductive line, wherein the via opening exposes a portion of the conductive line and a portion of the first photoresist material;
• depositing a conductive material into the via opening to form a via, wherein the conductive material only deposits on the exposed portion of the conductive line;
• removing the first photoresist layer and the second photoresist layer;
• forming a second dielectric layer over the first dielectric layer, the conductive line, and the via, wherein a top surface of the second dielectric layer is formed above a top surface of the via;
• and
• recessing the second dielectric layer to expose a top portion of the via.

A method of forming a conductive via, comprising:

• forming a via pad over a first dielectric layer;
• forming a second dielectric layer over the via pad and the first dielectric layer;
• depositing a hardmask layer over the second dielectric layer;
• patterning the hardmask layer to form a via opening in the hardmask layer;
• transferring the via opening in the hardmask layer to the second dielectric layer with a dry etching process, wherein sidewalls of the via opening are substantially vertical, and wherein a width of the transferred via opening in the second dielectric layer is uniform through a thickness of the second dielectric layer, and wherein the width of the transferred via opening in the second dielectric layer is the same as a width of the via opening in the hardmask layer;
• and
• depositing a conductive material into the transferred via opening in the second dielectric layer to form a via, the method further comprising:
• exposing an alignment mark below the hardmask layer with a laser ablation process;
• and using the alignment mark to align a via patterning mask above the hardmask layer prior to patterning the hardmask layer.