Power semiconductor module

A power semiconductor module, comprising:

• a substrate;
• a semiconductor provided on a top side of the substrate;
• and
• a package formed on the semiconductor and the substrate,
• wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside;
• wherein a control terminal and a first power terminal of the semiconductor are connected to respective contact areas of the substrate,
• wherein the contact area of the substrate connected to the control terminal is accessible from outside through a first opening of the openings in the package,
• wherein a terminal contact of a second power terminal of the semiconductor is accessible from outside through a second opening of the openings in the package,
• wherein the second power terminal is provided on a top side of the semiconductor, the control terminal and the first power terminal are provided on a bottom side of the semiconductor facing the substrate;
• and
• wherein the control terminal and the first power terminal are connected to respective contact areas of the substrate by a bottom side connecting layer between the semiconductor and the substrate, and the contact area of the substrate connected to the control terminal by the bottom side connecting layer is accessible from outside through the first opening in the package.