Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch

A method of forming source/drain contacts with reduced capacitance and resistance, comprising:

• forming a source/drain and a channel region on an active region of a substrate;
• forming a dielectric fill on the source/drain;
• forming a trench in the dielectric fill;
• forming a source/drain contact in the trench;
• forming an inner contact mask section on a portion of an exposed top surface of the source/drain contact;
• removing a portion of the source/drain contact to form a channel between a sidewall of the dielectric fill and a remaining portion of the source/drain contact, where a surface area including sidewalls of the remaining portion of the source/drain contact is greater than the surface area of the exposed top surface of the source/drain contact;
• forming a source/drain electrode fill on the remaining portion of the source/drain contact;
• and
• forming an ILD fill within a lower portion of the channel.