Method of manufacturing semiconductor device with interlayer insulating layers

A method of manufacturing a semiconductor device, the method comprising:

• forming a preparatory first interlayer insulating layer on a first region of a substrate, the preparatory first interlayer insulating layer delimiting a first pattern structure;
• forming a preparatory second interlayer insulating layer on a second region of the substrate, the preparatory second interlayer insulating layer delimiting a second pattern structure and including a first colloid;
• and
• converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers,
• wherein at least one of a density and a thermal expansivity of the second interlayer insulating layer is higher than at least one of a density and a thermal expansivity, respectively, of the first interlayer insulating layer, and
• wherein the preparatory first interlayer insulating layer comprises a second colloid different from the first colloid,
• wherein the first colloid includes a dispersion medium and a dispersoid surrounding the dispersion medium,
• wherein a material of the dispersion medium is the same as a material of the preparatory first interlayer insulating layer,
• wherein a material of the dispersion medium of the first colloid is the same as a material of the dispersion medium of the second colloid.

A method comprising:

• forming a pattern structure on a substrate, the pattern structure including a first pattern structure and a second pattern structure, a pattern density of the second pattern structure being lower than a pattern density of the first pattern structure;
• forming a preparatory first interlayer insulating layer on the first pattern structure, the preparatory first interlayer insulating layer including a second colloid;
• forming a first interlayer insulating layer on the first pattern structure;
• forming a preparatory second interlayer insulating layer on the second pattern structure, the preparatory second interlayer insulating layer including a first colloid, the second colloid different from the first colloid;
• annealing the preparatory first interlayer insulating layer and the preparatory second interlayer insulating layer to form a second interlayer insulating layer;
• and
• planarizing the first and second interlayer insulating layers to have upper surfaces thereof lower than upper surfaces of the first and second pattern structures,
• wherein a level of the upper surface of the first interlayer insulating layer is the same as a level of the upper surface of the second interlayer insulating layer,
• wherein each of the first colloid and the second colloid comprises a dispersoid and a dispersion medium surrounding the dispersoid, and
• wherein a material of the dispersion medium of the first colloid is the same as a material of the dispersion medium of the second colloid.