Method of forming via contact with resistance control
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Theodorus E Standaert
Life of this patent
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Abstract
A first dielectric layer on a substrate is provided. The first dielectric layer has a first level metal line embedded in the dielectric. An opposite gouging feature is created in a top surface of the first level metal line. The opposite gouging feature has a protuberant shape relative to the first level metal line. A second dielectric layer is formed over the first dielectric layer. A compound recess is formed in the second dielectric layer. A first portion of the recess is for a via connector positioned over the opposite gouging feature. A second portion of the recess for a second level metal line. In another aspect of the invention, a device is produced using the method.
Claims9
A method for fabricating an interconnect structure for an integrated circuit device comprising:
- providing a first dielectric layer on a substrate, the first dielectric layer having a first level metal line therein;
- creating an opposite gouging feature in a top surface of the first level metal line, the opposite gouging feature having a protuberant shape relative to the first level metal line;
- forming a second dielectric layer over the first dielectric layer;
- and
- forming a compound recess in the second dielectric layer, a first portion of the recess for a via connector positioned over the opposite gouging feature and a second portion of the recess for a second level metal line.
Dependencies are inferred from the claim text.