Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to process a substrate, in which an insulating film as a base film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film;
• a heating device configured to supply an electromagnetic wave into the process chamber to heat the substrate;
• and
• a control part configured to control the heating device to perform:
• raising a temperature of the substrate to a first temperature with the electromagnetic wave, wherein the first temperature ranges from 300 to 500 degrees C.;
• crystallizing the process target film of the substrate for a first process time period at the first temperature, wherein the first process time period ranges from 5 to 30 minutes;
• raising the temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the crystallizing the process target film;
• and
• repairing a crystal defect of the crystallizing the process target film of the substrate for a second process time period, which is shorter than the first process time period, at the second temperature.

A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus to perform a process by a computer, the process comprising:

• preparing a substrate, in which an insulating film as a base film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber;
• raising a temperature of the substrate to a first temperature with an electromagnetic wave supplied from a heating device, wherein the first temperature ranges from 300 to 500 degrees C.;
• crystallizing the process target film of the substrate for a first process time period after the raising the temperature of the substrate to the first temperature, wherein the first process time period ranges from 5 to 30 minutes;
• raising the temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, with the electromagnetic wave supplied from the heating device, after the crystallizing the process target film;
• and
• repairing a crystal defect of the crystallizing the process target film of the substrate for a second process time period, which is shorter than the first process time period, after the raising the temperature of the substrate to the second temperature.