Process for performing self-limited etching of organic materials
AssigneeTokyo Electron Limited
InventorsHiroto Ohtake, Takahito Mukawa
Life of this patent
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Abstract
A method and apparatus for selectively etching an organic material on a substrate is described. The method and apparatus includes forming a first plasma-excited process gas containing hydrogen (H) and optionally a noble gas element, exposing the substrate to the first plasma-excited process gas, forming a second plasma-excited process gas containing a noble gas element, exposing the substrate to the second plasma-excited process gas, and cyclically repeating the forming and exposing the first and second plasma-excited process gases at least two cycles to etch the first material selectively relative to the second material.
Claims19
A method of etching, comprising:
- providing a substrate containing a first material including an organic material, and a second material that is different from the first material;
- forming a first plasma-excited process gas containing hydrogen (H) and optionally a noble gas element;
- exposing the substrate to the first plasma-excited process gas;
- forming a second plasma-excited process gas containing a noble gas element;
- exposing the substrate to the second plasma-excited process gas;
- and
- cyclically repeating the forming and exposing the first and second plasma-excited process gases at least two cycles to etch the first material selectively relative to the second material.
Dependencies are inferred from the claim text.