Method of selective silicon nitride etching
AssigneeTokyo Electron Limited
InventorsAlok Ranjan, Vinayak Rastogi, Sonam D. Sherpa
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Abstract
Embodiments of the invention provide a substrate processing method for selective SiN etching relative to other layers used in semiconductor manufacturing. According to one embodiment, the substrate processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing NF3 and O2, and exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material. According to one embodiment, the second material may be selected from the group consisting of Si, SiO2, and a combination thereof.
Claims14
A substrate processing method, comprising:
- providing in a plasma processing chamber a substrate containing a first material containing SiN and a second material that is different from the first material;
- plasma-exciting a process gas containing NF3 and O2, wherein an O2/NF3 gas flow ratio is between about 0.1 and about 0.5;
- and
- exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material.
Dependencies are inferred from the claim text.