Selective film formation for raised and recessed features using deposition and etching processes

A substrate processing method, comprising:

• providing a substrate containing raised features, each of the raised features having a sidewall and a top portion;
• depositing a film on the raised features, on the sidewall and on an area between the raised features, wherein the film is non-conformally deposited with a greater film thickness on the top portion than on the sidewall and the area between the raised features, and wherein the film is selected from the group consisting of Cu, Al, Ta, Ru, TaN, TaC, and TaCN;
• etching the film, wherein the etching thins the film on the top portion and removes the film from the sidewall and the area between the raised features;
• and
• repeating the depositing and the etching at least once to increase the film thickness on the top portion.

A substrate processing method, comprising:

• providing a substrate containing raised features, each of the raised features having a sidewall and a top portion;
• depositing a Ru metal film on the raised features, on the sidewall and on an area between the raised features, wherein the Ru metal film is non-conformally deposited with a greater film thickness on the top portion than on the sidewall and the area between the raised features;
• etching the Ru metal film, wherein the etching thins the Ru metal film on the top portion and removes the Ru metal film from the sidewall and the area between the raised features;
• and
• repeating the depositing and the etching at least once to increase the Ru metal film thickness on the top portion.