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US 10,381,233 B2Granted
Method and apparatus for substrate processing
AssigneeTokyo Electron Limited
InventorsKoji Kagawa, Syuhei Yonezawa, Kazuya Dobashi, Toshihide Takashima, Masaru Amai
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Abstract
A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.
Claims11
A substrate processing method comprising:
- bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate, wherein the boron monofilm consists of only boron and inevitable impurities.
Dependencies are inferred from the claim text.