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US 10,381,230 B2Granted
Gallium nitride substrate and optical device using the same
AssigneeSumitomo Chemical Company, Limited
InventorShunsuke Yamamoto
Life of this patent
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Abstract
A method of processing a gallium nitride substrate, includes providing a gallium nitride substrate, polishing a surface of the gallium nitride substrate, and cleaning the polished surface of the gallium nitride substrate. The polished surface includes a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum which is not less than 2, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.
Claims4
A method of making a gallium nitride substrate, comprising:
- providing a gallium nitride substrate;
- and
- measuring a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum of a surface of the gallium nitride substrate, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.
Dependencies are inferred from the claim text.