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US 10,381,228 B2Granted
Epitaxial process applying light illumination
AssigneeUnited Microelectronics Corp.
InventorsYu-Ying Lin, Ted Ming-Lang Guo, Chin-Cheng Chien, Chih-Chien Liu, Hsin-Kuo Hsu, Chin-Fu Lin, Chun-Yuan Wu
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Abstract
An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.
Claims17
An epitaxial process applying light illumination, comprising:
- providing a substrate, wherein the substrate has at least a fin structure;
- forming a gate on the substrate;
- performing a dry etching process and a wet etching process to form a recess having a diamond-shaped cross-sectional profile in the substrate beside the gate, wherein an infrared light illuminates while the wet etching process is performed to change etching rates for different crystal planes, to form the recess having only one tip pointing toward a gate channel of the gate, and the recess is located in the fin structure;
- and
- forming an epitaxial structure in the recess.
2 more elements
Dependencies are inferred from the claim text.