Methods of atomic layer etching (ALE) using sequential, self-limiting thermal reactions
AssigneeThe Regents of the University of Colorado, a body corporate
InventorsSteven M. George, Younghee Lee
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Abstract
The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. The invention provides a solid substrate obtained according to any of the methods of the invention. The invention further provides a porous substrate obtained according to any of the methods of the invention. The invention further provides a patterned solid substrate obtained according to any of the methods of the invention.
Claims22
A method of etching a solid substrate comprising a first metal compound using atomic layer etching (ALE), the method comprising the sequential steps of:
- (a) contacting the solid substrate, wherein the substrate comprises a first metal compound comprising at least one first ligand, with a gaseous second metal precursor, wherein the second metal precursor comprises at least one second ligand selected from the group consisting of monodentate ligands, chelates, and any combinations thereof;
- wherein the at least one second ligand from the second metal precursor is transferred to the first metal, and wherein the at least one first ligand from the first metal compound is transferred to the second metal, whereby a first metal precursor is formed on the substrate;
- (b) contacting the solid substrate formed in step (a) with a halogen-containing gas, whereby a first metal halide is formed;
- and
- (c) optionally repeating steps (a) and (b) one or more times;
- wherein the monodentate ligand comprises at least one selected from the group consisting of alkyl, hydride, carbonyl, halide, alkoxide, alkylamide, silylamide, and any combinations thereof;
- and,
- wherein the chelate comprises at least one selected from the group consisting of β-diketonate, amidinate, acetamidinate, β-diketiminate, diamino alkoxide, metallocene and any combinations thereof;
- whereby the solid substrate is etched.
A method of modifying a porous substrate, wherein the porous substrate comprises a first metal compound, the method comprising the sequential steps of:
- (a) contacting the porous substrate, wherein the substrate comprises a first metal compound comprising at least one first ligand, with a gaseous second metal precursor, wherein the second metal precursor comprises at least one second ligand selected from the group consisting of monodentate ligands, chelates and any combinations thereof,
- wherein the at least one second ligand from the second metal precursor is transferred to the first metal, and wherein the at least one first ligand from the first metal compound is transferred to the second metal, whereby a first metal precursor is formed on the substrate;
- (b) contacting the porous substrate formed in step (a) with a halogen-containing gas, whereby a first metal halide is formed;
- and
- (c) optionally repeating steps (a) and (b) one or more times;
- wherein the modifying comprises at least one activity selected from the group consisting of:
- forming or enlarging pores in the porous substrate;
- patterning the solid substrate;
- selectively removing a portion of the solid substrate;
- smoothing the surface of the solid substrate;
- removing at least a fraction of an impurity from the solid substrate, wherein a portion of a surface of the solid substrate has an exposed first metal compound;
- and
- reducing the size of at least one 3D architecture feature on a surface of the solid substrate.
Dependencies are inferred from the claim text.