Method of processing substrate
AssigneeASM IP Holding B.V.
InventorsYong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim
Life of this patent
Estimating the term…
Abstract
A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.
Claims20
A method of processing a substrate, the method comprising:
- preparing a structure comprising a first surface and a second surface having a slope with respect to the first surface;
- forming a first layer on the structure by applying plasma, wherein at least part of the first layer is densified or embrittled due to collision of plasma active species;
- isotropically etching the first layer so that at least part of the first layer remains as a remnant;
- forming a second layer on the structure and the remnant of the first layer, the second layer comprising a dopant;
- and
- diffusing the dopant into the structure.
A method of processing a substrate, the method comprising:
- forming a diffusion barrier, comprising a first portion and a second portion having a slope with respect to the first portion, on a structure;
- applying plasma to densify or embrittle the first portion of the diffusion barrier;
- isotropically etching the diffusion barrier;
- forming a diffusion source layer on the structure and a remnant of the diffusion barrier;
- diffusing a dopant into the structure;
- and
- removing the diffusion source layer and the remnant of the diffusion barrier.
A method of processing a substrate, the method comprising:
- forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method;
- removing the diffusion barrier except for a part of the diffusion barrier using wet etching;
- forming a diffusion source layer on the patterned structure and the part of the diffusion barrier;
- and
- applying energy to the diffusion source layer.
Dependencies are inferred from the claim text.