Methods of forming a semiconductor structure and methods of forming isolation structures
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
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Abstract
A method of reducing silicon consumption of a silicon material. The method comprises cleaning a silicon material and subjecting the cleaned silicon material to a vacuum anneal at a temperature below a melting point of silicon and under vacuum conditions. The silicon material is subjected to additional process acts without substantially removing silicon of the silicon material. Additional methods of forming a semiconductor structure and forming isolation structures are also disclosed.
Claims20
A method of forming a semiconductor structure, comprising:
- cleaning a silicon material at a chuck temperature between about 800° C. and about 1000° C.;
- vacuum annealing the silicon material;
- and
- forming an insulating material on the silicon material,
- wherein the cleaning, the vacuum annealing, and the forming are conducted in a single processing apparatus.
A method of forming a semiconductor structure, comprising:
- cleaning a silicon material;
- vacuum annealing the silicon material and further comprising exposing the silicon material to a silicon source gas during the vacuum annealing;
- and
- forming an insulating material on the silicon material,
- wherein the cleaning, the vacuum annealing, and the forming are conducted in a single processing apparatus.
A method of forming isolation structures in a single processing apparatus, the method comprising:
- vacuum annealing a silicon material comprising mesas and trenches therein, the silicon material being substantially free from contaminants;
- and
- forming an insulating material in the trenches to isolate adjacent mesas of the silicon material from one another,
- wherein the vacuum annealing and the forming are conducted in a single processing apparatus.
Dependencies are inferred from the claim text.