Plasma chamber with tandem processing regions

An apparatus for processing a substrate, comprising:

• a chamber body having a first processing region and a second processing region separated by a partition wall, the chamber body comprising:
• a bottom wall bounding the first and second processing regions;
• a vacuum port having a first portion disposed through the bottom wall, the vacuum port fluidly coupled to the first and second processing regions;
• a front wall connected to the bottom wall;
• and
• a vacuum housing connected to the front wall and extending outwardly from the front wall, the vacuum housing having a second portion of the vacuum port formed therein.

An apparatus for processing a substrate, comprising:

• a first substrate support for supporting a substrate in a first processing region and a first stem coupled to the first substrate support, wherein the first substrate support has a first longitudinal axis extending through the first stem;
• a second substrate support for supporting a substrate in a second processing region and a second stem coupled to the second substrate support, and wherein the second substrate support has a second longitudinal axis extending through the second stem;
• a chamber body having a first chamber side including the first processing region and a second chamber side including the second processing region, the chamber body defining a first exhaust path for the first chamber side and a second exhaust path for the second chamber side and including:
• a front wall;
• a bottom wall connected to the front wall;
• a first chamber side port and a second chamber side port disposed in the bottom wall, wherein the first stem extends through the first chamber side port and the second stem extends through the second chamber side port, and wherein the first chamber side port and the second chamber side port have an x-axis extending through the first longitudinal axis of the first stem and the second longitudinal axis of the second stem,
• a vacuum port disposed in the bottom wall, wherein the vacuum port is positioned between the first chamber side port and the second chamber side port, and wherein the vacuum port is positioned toward the front wall and completely below the x-axis of the first chamber side port and the second chamber side port;
• wherein the first exhaust path extends from the first processing region and to the vacuum port;
• wherein the second exhaust path extends from the second processing region and to the vacuum port.