Ion implantation apparatus and ion implantation method
AssigneeToshiba Memory Corporation
InventorsTsuyoshi Fujii, Takayuki Ito, Yasunori Oshima
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Abstract
In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.
Claims6
An ion implantation apparatus comprising:
- an ion source configured to generate an ion beam;
- a scanner configured to change an irradiation position with the ion beam on an irradiation target;
- a first electrode configured to accelerate an ion in the ion beam;
- a plurality of second electrodes provided on a side of a subsequent stage of the first electrode, provided on a side of a back surface of the irradiation target, and configured to accelerate the ion in the ion beam;
- and
- a controller configured to change energy of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source,
- wherein the controller changes the energy of the ion beam according to the irradiation position by controlling voltages to be applied to the plurality of second electrodes for each of the second electrodes.
An ion implantation apparatus comprising:
- an ion source configured to generate an ion beam;
- a scanner configured to change an irradiation position with the ion beam on an irradiation target;
- a first electrode configured to accelerate an ion in the ion beam;
- a second electrode provided on a side of a subsequent stage of the first electrode, provided on a side of a back surface of the irradiation target, and configured to accelerate the ion in the ion beam;
- and
- a controller configured to change energy of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source,
- wherein the controller changes the energy of the ion beam according to the irradiation position by controlling a voltage to be applied to the second electrode and a scanning speed of the ion beam by the scanner.
An ion implantation method comprising:
- generating an ion beam from an ion source;
- changing, by a scanner, an irradiation position with the ion beam on an irradiation target;
- accelerating an ion in the ion beam by a first electrode;
- accelerating the ion in the ion beam by a plurality of second electrodes provided on a side of a subsequent stage of the first electrode and provided on a side of a back surface of the irradiation target;
- and
- changing, by a controller, energy of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source,
- wherein the controller changes the energy of the ion beam according to the irradiation position by controlling voltages to be applied to the plurality of second electrodes for each of the second electrodes.
An ion implantation method comprising:
- generating an ion beam from an ion source;
- changing, by a scanner, an irradiation position with the ion beam on an irradiation target;
- accelerating an ion in the ion beam by a first electrode;
- accelerating the ion in the ion beam by a second electrode provided on a side of a subsequent stage of the first electrode and provided on a side of a back surface of the irradiation target;
- and
- changing, by a controller, energy of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source,
- wherein the controller changes the energy of the ion beam according to the irradiation position by controlling a voltage to be applied to the second electrode and a scanning speed of the ion beam by the scanner.
Dependencies are inferred from the claim text.