Semiconductor memory system performing read operation based on counted memory cells and operating method thereof
AssigneeSK hynix Inc.
InventorWoo-Hyun Kim
Life of this patent
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Abstract
A semiconductor apparatus comprising: a memory device including at least a word line; and a controller suitable for controlling the memory device to perform a write operation and a read operation, wherein the controller includes a counting unit suitable for counting a number of memory cells coupled to the word line for respective threshold voltages, and wherein the controller controls the memory device to perform a read operation based on the counted number of memory cells for the respective threshold voltages.
Claims17
A semiconductor apparatus comprising:
- a memory device including at least a word line;
- and
- a controller suitable for controlling the memory device to perform a write operation and a read operation,
- wherein the controller includes a counting unit suitable for counting a number of memory cells coupled to the word line for respective threshold voltages,
- wherein the controller controls the memory device to perform a read operation based on the counted number of memory cells for the respective threshold voltages, and
- wherein the controller further includes a mapping unit suitable for converting the counted number of memory cells for the respective threshold voltages into range values of accumulated number of cells and mapping the range value of accumulated number of cells to information bits.
An operating method of a controller, the method comprising:
- counting a number of memory cells coupled to a word line for respective threshold voltages;
- and
- performing a read operation based on the counted number of memory cells for the respective threshold voltages, and
- converting the counted number of memory cells for the respective threshold voltages into range values of accumulated number of cells and mapping the range value of accumulated number of cells to information bits.
An operating method of a controller the method comprising:
- allocating range values to accumulated number of memory cells coupled to a word line for threshold voltages, respectively;
- counting as a cell count an accumulated number of memory cells coupled to the word line and turned on according to a threshold voltage during a read operation;
- adjusting, when the read operation fails, the threshold voltage of the read operation based on the cell count and one corresponding to the read-failed threshold voltage among the range values;
- and
- repeating the counting and the adjusting until the cell count falls in the range value corresponding to the adjusted threshold voltage of the read operation.
Dependencies are inferred from the claim text.