FeRAM-DRAM hybrid memory
AssigneeMicron Technology, Inc.
InventorKazuhiko Kajigaya
Life of this patent
Estimating the term…
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. One method includes determining whether to access a first memory cell of a first memory cell array or a second memory cell of a second memory cell array, where a first digit line coupled to the first memory cell is coupled to a paging buffer register including a sense amplifier. The method further includes operating a transfer gate based at least in part on determining to read the second memory cell of the second memory cell array, where the transfer gate is configured to selectively couple a second digit line coupled to the second memory cell to the paging buffer register through the first digit line.
Claims20
A method of operating a memory device, comprising:
- determining whether to access a first memory cell or a second memory cell;
- and
- applying, to a transfer gate, a signal based at least in part on the determination, the transfer gate to selectively couple either the first memory cell or the second memory cell to a sense amplifier via a digit line.
An apparatus, comprising:
- a first memory cell coupled to a first digit line;
- a second memory cell coupled to a second digit line;
- and
- a transfer gate to selectively couple either the first memory cell or the second memory cell to a respective sense amplifier via either the first digit line or the second digit line.
A data processing system, comprising:
- a processor;
- a memory array coupled with the processor;
- and
- a memory controller to communicate with the memory array, wherein the memory array comprises:
- a first memory cell coupled to a first digit line;
- a second memory cell coupled to a second digit line;
- and
- a transfer gate to selectively couple either the first memory cell or the second memory cell to a respective sense amplifier via either the first digit line or the second digit line, the first memory cell to operate in a volatile mode and the second memory cell to operate in a non-volatile mode.
Dependencies are inferred from the claim text.