Converged structure supporting buffering of recent writes and overwrite disturb remediation

A non-transitory machine-readable storage medium, which stores instructions that, when executed by a processor, cause the processor to:

• write user data to an aggressor memory cell;
• locate a first entry for the aggressor memory cell in a first data structure, wherein the first data structure includes entries for each memory cell in a first set of memory cells, including a neighbor memory cell of the aggressor memory cell and the aggressor memory cell, and each entry in the first data structure includes a disturb counter corresponding to an associated memory cell;
• determine, based on the first entry, whether a second data structure includes a second entry corresponding to the aggressor memory cell, wherein the second data structure includes entries for a second set of memory cells written during a first time period, wherein the second set of memory cells is a subset of the first set of memory cells and wherein each entry in the second data structure includes a write timestamp and overwrite count corresponding to an associated memory cell;
• determine, based on the second entry, one or more of a write timestamp and an overwrite count associated with the aggressor memory cell, wherein the write timestamp indicates a last write to the aggressor memory cell and the overwrite count indicates the number of writes to the aggressor memory cell during a time period;
• determine, based on one or more of the write timestamp and the overwrite count, an increment value of a disturb counter associated with the neighbor memory cell;
• increment, in response to the write, the disturb counter associated with the neighbor memory cell based on the increment value;
• and
• perform, in response to the disturb counter being greater than or equal to a disturb threshold, remediation for the neighbor memory cell.

A system comprising:

• a memory device comprising a first memory cell and a second memory cell, wherein the second memory cell is a neighbor of the first memory cell in the memory device;
• and
• a processor, coupled to the memory device, the processor to write user data to the first memory cell and to:
• locate a first entry for the first memory cell in a first data structure, wherein the first data structure includes entries for each memory cell in a first set of memory cells, including the second memory cell and the first memory cell, and each entry in the first data structure includes a disturb counter corresponding to an associated memory cell,
• determine, based on the first entry, whether a second data structure includes a second entry corresponding to the first memory cell, wherein the second data structure includes entries for a second set of memory cells written during a first time period, wherein the second set of memory cells is a subset of the first set of memory cells and wherein each entry in the second data structure includes a write timestamp and overwrite count corresponding to an associated memory cell,
• determine, based on the second entry, one or more of a write timestamp and an overwrite count associated with the first memory cell, wherein the write timestamp indicates a last write to the first memory cell and the overwrite count indicates the number of writes to the first memory cell during a time period,
• determine, based on one or more of the write timestamp and the overwrite count, an increment value of a disturb counter associated with the second memory cell,
• increment, in response to the write, the disturb counter associated with the second memory cell based on the increment value, and
• perform, in response to the disturb counter being greater than or equal to a disturb threshold, remediation for the second memory cell.