Phase change memory stack with treated sidewalls
AssigneeMicron Technology, Inc.
InventorsYongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
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Abstract
Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.
Claims12
A method for fabricating a memory device comprising:
- forming multiple memory stacks having sidewalls, each memory stack formed by operations comprising:
- forming a first carbon electrode over a word line material;
- forming a selector device material over the first carbon electrode;
- forming a second carbon electrode over the selector device material;
- forming a phase change material over the second carbon electrode;
- and
- forming a third carbon electrode over the phase change material;
- and
- forming a liner material on sidewalls of each memory stack using a radio frequency (RF) physical vapor deposition (PVD) process, the liner material comprising an adhesion species and a dielectric such that the adhesion species intermixes with the carbon of the electrodes at an interface of the liner material and the sidewalk.
A method for fabricating a memory device, comprising:
- forming a plurality of multiple memory stacks having sidewalk, each memory stack formed by operations comprising:
- forming a first carbon electrode layer over a material of either a word line or a bit line structure;
- over the first carbon electrode layer, forming a stack structure including a selector device material layer and a phase change material layer on opposite sides of a second carbon electrode layer, wherein the phase change material layer comprises one or more chalcogenide materials;
- and
- forming a third carbon electrode layer over the stack structure;
- patterning the formed memory stack material layers to define multiple memory stacks having sidewalls;
- and
- forming a liner material on sidewalls of each memory stack using a radio frequency (RF) physical vapor deposition (PVD) process, the liner material comprising an adhesion species and a dielectric such that the adhesion species intermixes with the carbon of the electrodes at an interface of the liner material and the sidewalls, and wherein the adhesion species and dielectric comprise the liner material.
Dependencies are inferred from the claim text.