Multi-bit computing circuit for computing-in-memory applications and computing method thereof
AssigneeNational Tsing Hua University
InventorsXin Si, Meng-Fan Chang
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AssigneeNational Tsing Hua University
InventorsXin Si, Meng-Fan Chang
Estimating the term…
A multi-bit computing circuit for computing-in-memory applications is controlled by an input port and includes a memory cell array and a capacitor sharing unit. The memory cell array includes a plurality of memory cells connected to the input port. The memory cells store a weight which is formed in two's complement. The capacitor sharing unit includes a plurality of switches, a plurality of capacitors and a sense amplifier. The switches are electrically connected to the memory cells, respectively. The capacitors are electrically connected to the switches, respectively. The sense amplifier is electrically connected to the capacitors and generates a total operational value. The capacitors are located among the switches and the sense amplifier, and the switches are switched to enable the total operational value to be equal to the input value multiplied by the weight. The present disclosure utilizes 8T SRAM cells without an extra DAC structure.
A multi-bit computing circuit for computing-in-memory applications, which is controlled by a first bit line, a second bit line, a word line and an input port, the input port transmits an input value, and the multi-bit computing circuit for the computing-in-memory applications comprising:
A multi-bit computing circuit for computing-in-memory applications, which is controlled by a first bit line, a second bit line, a word line and a plurality of input ports, each of the input ports transmits an input value, and the multi-bit computing circuit for the computing-in-memory applications comprising:
Dependencies are inferred from the claim text.