High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array

A method of storing data in a magnetic random access memory (MRAM) array, comprising:

• driving a spin-transfer torque (STT) switching current through at least two diodes, a spin-hall conductive material coupled to the at least two diodes, a transistor coupled to the spin-hall conductive material, and a perpendicular magnetic tunnel junction (pMTJ), the STT switching current generating a spin-orbit torque (SOT) to generate a spin current;
• driving the spin current through the pMTJ;
• and
• setting a state of at least one of a plurality of bit cells using the STT switching current and the spin current.

A magnetic random access memory (MRAM) array, comprising:

• a plurality of bit cells, each of the plurality of bit cells comprising:
• a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer;
• a spin-hall conductive material layer supporting the free layer;
• at least one transistor coupled to the spin-hall conductive material layer;
• and
• at least two diodes coupled to the spin-hall conductive material layer;
• and
• means for setting a state of at least one of the plurality of bit cells using a spin-transfer torque (STT) switching current and a spin current by driving the STT switching current through both the spin-hall conductive material layer to generate a spin-orbit torque (SOT) and the pMTJ, the SOT generating the spin current through the pMTJ.