Pattern forming method, semiconductor device, and manufacturing method thereof
AssigneeKabushiki Kashia Toshiba
InventorsMichihiko Nishigaki, Yutaka Onozuka, Shouhei Kousai, Yosuke Akimoto, Miyu Nagai, Kaita Imai
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Abstract
According to one embodiment, a pattern forming method includes forming a resist pattern on a substrate, forming a first silicone resin layer so as to bury the resist pattern on the substrate, pressing a film on the surface of the first silicone resin layer to adhere the film thereto, curing the first silicone resin layer after the adhesion of the film, peeling the film from the first silicone resin layer before or after the curing of the first silicone resin layer, and removing the resist pattern after the peeling of the film.
Claims5
A pattern forming method, comprising:
- forming a resist pattern on a substrate;
- forming a silicone resin layer which is ultraviolet-cured on the substrate with the resist pattern formed thereon;
- selectively irradiating ultraviolet on the silicone resin layer, the ultraviolet not being irradiated at least on a region corresponding to the resist pattern, to cure the irradiated area;
- removing an uncured part of the silicone resin layer by a developer;
- and
- removing the resist pattern through a part where the silicon resin layer is removed.
Dependencies are inferred from the claim text.