US 10,379,175 B2Granted

Low-noise magnetic sensors

AssigneeKing Abdullah University of Science and Technology

InventorsJurgen Kosel, Jian Sun

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Abstract

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Claims17

Dependent claims

A magnetic sensor for measuring a magnetic field, the magnetic sensor comprising:

a semiconductor layer having a first side and a second side, wherein the second side of the semiconductor layer is opposite to the first side of the semiconductor layer;
a conductive layer having a first side and a second side, wherein the second side of the conductive layer is opposite to the first side of the conductive layer and the second side is physically covering the first side of the semiconductor layer;
and
a three-contact configuration that includes only:
a first current electrode physically coupled to the second side of the semiconductor layer;
a second current electrode physically coupled to the second side of the semiconductor layer, the first current electrode configured to provide a current flowing between the first and second current electrodes for measurement by a current measurement circuit;
and
a voltage electrode physically coupled to the first side of the conductive layer, the voltage electrode being configured to provide a voltage across the semiconductor layer and the conductive layer for measurement by a voltage measurement circuit, where the voltage is measured between the voltage electrode and the second current electrode for determining the magnetic field,
wherein no other electrode, except the first and second current electrodes and the voltage electrode, is connected to the semiconductor layer or the conductive layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/097,332Filed 5 Dec 2013 · continuation in part
Priority: 20 Jul 2010
Published: US 2014/0084913 A127 Mar 2014
Granted: 13 Aug 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

G01R 33/095
Magnetoresistive devices: extraordinary magnetoresistance sensors
G01R 33/0052
Arrangements or instruments for measuring magnetic variables: manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor…
G01R 33/07
Using galvano-magnetic devices: hall effect devices
G01R 33/072
Hall effect devices: constructional adaptation of the sensor to specific applications

Family

Application61/365,914Us provisional application · filed 20 Jul 2010
Application13/187,329Parent of this continuation-in-part · filed 20 Jul 2011
Application61/733,973Us provisional application · filed 6 Dec 2012
US 2014/0084913 A1Pre-grant publication · published 27 Mar 2014
US 2017/0038439 A9Pre-grant publication · published 9 Feb 2017
US 9,164,153 B2Parent of this continuation-in-part
US 2012/0038356 A1Published application
US 10,379,175 B2This patent

From the US filing history. Foreign family members aren’t listed.