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US 10,379,079 B2Granted
Methods and apparatus for measuring analytes using large scale FET arrays
AssigneeLife Technologies Corporation
InventorKeith G. Fife
Life of this patent
Estimating the term…
Abstract
A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.
Claims12
A semiconductor device, comprising:
- a first field effect transistor (FET), the first FET having a first electrode proximate to a first reaction site;
- a second FET connected in series to the first FET, the second FET having a second electrode proximate to a second reaction site;
- a select transistor connected in series to the first FET and the second FET, wherein the select transistor concurrently couples the first FET to a first output conductor and the second FET to a second output conductor in response to a select signal;
- and
- bias circuitry coupled to the first FET and the second FET, wherein the bias circuitry is configured to apply a voltage to one of either the first FET or the second FET, and to concurrently apply a current sink to the other of the first or the second FET.
2 more elements
Dependencies are inferred from the claim text.