Dual temperature band integrated circuit device
AssigneeRambus Inc.
InventorsThomas Vogelsang, Frederick A. Ware
Life of this patent
Estimating the term…
Abstract
During operation of an IC component within a first range of temperatures, a first bias voltage is applied to a first substrate region disposed adjacent a first plurality of transistors to effect a first threshold voltage for the first plurality of transistors. During operation of the IC component within a second range of temperatures that is distinct from and lower than the first range of temperatures, a second bias voltage is applied to the first substrate region to effect a second threshold voltage for the first plurality of transistors that is at least as low as the first threshold voltage.
Claims21
A method of operating an integrated-circuit (IC) component having a dielectric layer disposed between a first substrate region and a first plurality of transistors, the method comprising:
- during operation of the IC component within a first range of temperatures, applying a first bias voltage to the first substrate region to effect a first threshold voltage for the first plurality of transistors;
- and
- during operation of the IC component within a second range of temperatures that does not overlap and is lower than the first range of temperatures, applying a second bias voltage to the first substrate region to effect a second threshold voltage for the first plurality of transistors that is at least as low as the first threshold voltage, the second bias voltage having a higher magnitude than the first bias voltage relative to a ground voltage supplied to the IC component.
An integrated-circuit (IC) component comprising:
- a first substrate region disposed adjacent a first plurality of transistors and separated from the first plurality of transistors by a dielectric layer;
- and
- circuitry to switchably apply to the first substrate region, according to a signal that indicates whether an operating temperature of the IC component is within a first temperature range above 273 Kelvin or a second temperature range below 100 Kelvin, either (i) a first bias voltage to effect a first threshold voltage for the first plurality of transistors, or (ii) a second bias voltage to effect a second threshold voltage for the first plurality of transistors, respectively, the second bias voltage having a higher magnitude than the first bias voltage relative to a ground voltage supplied to the IC component.
An integrated-circuit (IC) component comprising:
- a first substrate region disposed adjacent a first plurality of transistors and separated from the first plurality of transistors by a first dielectric region;
- a second substrate region disposed adjacent a second plurality of transistors and separated from the second plurality of transistors by a second dielectric region;
- a first conductor coupled to the first substrate region to apply thereto either (i) a first bias voltage to effect a first positive threshold voltage for the first plurality of transistors, or (ii) a second bias voltage to effect a second positive threshold voltage for the first plurality of transistors;
- and
- a second conductor coupled to the second substrate region to apply thereto either (i) a third bias voltage to effect a third positive threshold voltage for the second plurality of transistors, or (ii) a fourth bias voltage to effect a fourth positive threshold voltage for the second plurality of transistors, the first and third threshold voltages being different from one another and the second and fourth threshold voltages being different from one another.
Dependencies are inferred from the claim text.