Light generation with light emitting diode and laser

A light generating device, comprising:

• at least one light emitting diode having:
• a semiconductor layer that emits a first primary light,
• a phosphor layer applied directly to a first surface of the semiconductor layer, and
• a reflector layer applied to a second surface of the semiconductor layer opposite to the first surface of the semiconductor layer, wherein the semiconductor layer, the phosphor layer, and the reflector layer collectively form a thin-film light emitting diode;
• and
• at least one laser for generating at least one laser beam composed of a second primary light, such that the phosphor layer is irradiatable,
• wherein the phosphor layer is configured for at least partly converting the first primary light into at least one first secondary light and for at least partly converting the second primary light into at least one second secondary light,
• wherein the light generating device is configured to dynamically illuminate the phosphor layer by means of the second primary light.