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US 10,378,124 B2Granted
Device including semiconductor substrate containing gallium nitride and method for producing the same
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorMasaki Fujikane
Life of this patent
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Abstract
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
Claims7
A method for producing a device, the method comprising:
- preparing a semiconductor substrate containing gallium nitride and having a crystal face inclined with respect to a c-plane;
- forming an irregular portion on the crystal face of the semiconductor substrate containing gallium nitride by subjecting at least part of the crystal face to dry etching;
- and
- modifying a surface of the irregular portion.
1 more element
Dependencies are inferred from the claim text.