Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same

A cleaning solution which removes a dry etching residue and a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from a material that contains 10 atomic % or more of titanium and a material that contains 10 atomic % or more of tungsten, wherein:

• the cleaning solution comprises:
• 0.002 to 50% by mass of at least one oxidant selected from the group consisting of a peroxide, perchloric acid and a perchlorate salt,
• 0.000001 to 5% by mass of an alkaline earth metal compound,
• a pH adjuster, and
• water;
• the cleaning solution has a pH value ranging from 3 to 14;
• and
• the cleaning solution does not contain hydrogen fluoride and does not contain strontium nitrate.