Etching composition and method for fabricating semiconductor device by using the same

An etching composition having an etching selectivity for titanium nitride (TiN), comprising hydrogen peroxide, an acid compound, and a corrosion inhibitor,

• wherein a ratio of a weight of the acid compound with respect to a weight of the hydrogen peroxide is from 1 to 7,
• the acid compound comprises at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH),
• a pH of the etching composition is less than 2, and
• the etching selectivity for the titanium nitride with respect to tantalum nitride is equal to or greater than 500.

An etching composition comprising:

• 5 wt % to 30 wt % of hydrogen peroxide, greater than 20 wt % and less than 40 wt % of an acid compound, and 0.001 wt % to 5 wt % of a corrosion inhibitor, with respect to a total weight of the etching composition,
• wherein the corrosion inhibitor is at least one of ammonium peroxysulfate, ammonium sulfate, monoammonium phosphate, diammonium phosphate, triammonium phosphate, ammonium chloride, ammonium acetate, ammonium carbonate, ammonium nitrate, ammonium iodide, 1,2,4-triazole, 3-aminotriazole, 5-aminotetrazole, benzotriazole, pyrazole, imidazole, ascorbic acid, citric acid, succinic acid, maleic acid, malonic acid, thioglycolic acid, tannic acid, methyl gallate, ethyl gallate, and propyl gallate,
• a pH of the etching composition is less than 2, and
• an etching selectivity of the etching composition for titanium nitride with respect to tantalum nitride is equal to or greater than 500.