Self-passivating quantum dot and preparation method thereof

A method of producing a self-passivating quantum dot, comprising:

• (1) adding an M precursor comprising a self-passivating element M to a quantum dot core precursor solution to form a quantum dot core doped with M;
• adding the quantum dot core doped with M and a solvent to a reaction vessel at 100-120° C., and vacuumizing the reaction vessel for 30-50 minutes;
• (2) filling the reaction vessel with inert gas, and rising the temperature to 230-280° C.;
• (3) injecting a coating material precursor solution into the reaction vessel for reaction to produce a self-passivating quantum dot with one layer of coating material, wherein the molar ratio of the coating material precursor solution to the quantum dot core is 1:1 or 2:1;
• and
• (4) when a coating layer is multilayer, repeating step (3) to continually form the coating material outside of the self-passivating quantum dot prepared in step (3) to produce a self-passivating quantum dot with multilayer coating material;
• wherein the self-passivating element M is selected from the group consisting of Al, Zr, Fe, Ti, Cr, Ta, Ni and Si.