Polyetherimide compositions, articles made therefrom, and method of manufacture thereof
AssigneeSabic Global Technologies B.V.
InventorsChen Xu, Hao Zhou, Wei Zhao
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Abstract
A polyetherimide composition is disclosed including a polyetherimide sulfone having a glass transition temperature of 240 to 320 C, preferably 245 to 312 C, and a particulate, thermally conductive filler composition. A layer of the polyetherimide composition resists deformation as determined by IPC method TM-650 when subjected to a lead-free solder reflow process at a temperature of greater than or equal to 260 C, preferably 260 to 350 C. A layer including the polyetherimide composition further has a thermal conductivity of 2.5 to 15 W/mK, preferably 3 to 12 W/mK, as determined in accordance with ISO 22007-2:2008.
Claims5
A circuit assembly comprising
- a polyetherimide dielectric layer comprising a polyetherimide composition comprising
- a polyetherimide sulfone having a glass transition temperature of 240 to 320° C.;
- and
- a particulate, thermally conductive filler composition comprising 30 to 50 wt. % boron nitride and 5 to 15 wt. % graphite, wherein weight percent is based on the total weight of the polyetherimide composition;
- and
- a conductive metal layer disposed on the polyetherimide dielectric layer;
- wherein the polyetherimide dielectric layer
- resists deformation as determined by IPC method TM-650 when subjected to a lead-free solder reflow process at a temperature of greater than or equal to 260° C., and
- the polyetherimide dielectric layer has a thermal conductivity of 2.5 to 15 W/mK as determined in accordance with ISO 22007-2:2008.
Dependencies are inferred from the claim text.