Modifying bulk properties of a glass substrate
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsJoseph C. Olson, Ludovic Godet, Gary Dickerson
Life of this patent
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsJoseph C. Olson, Ludovic Godet, Gary Dickerson
Estimating the term…
Embodiments of the disclosure provide an apparatus and methods for localized stress modulation for overlay and substrate distortion using electron or ion implantation directly to a glass substrate. In one embodiment, a process for modifying a bulk property of a glass substrate generally includes identifying a stress pattern of a glass substrate, determining doping parameters to correct a defect (e.g., overlay error or substrate distortion) based on the stress pattern, and providing a treatment recipe to a treatment tool, wherein the treatment recipe is formulated according to the doping parameters. The process may further include performing a doping treatment process on the glass substrate using the treatment recipe to correct the overlay error or substrate distortion. In some embodiments, the treatment recipe is determined by comparing the stress pattern with a database library containing data correlating stress changes in glass substrates to various doping parameters.
A method for modifying a bulk property of a glass substrate, the method comprising:
A method for determining and correcting errors on a glass substrate, the method comprising:
Dependencies are inferred from the claim text.