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US 10,376,608 B1Granted
Ultraviolet disinfection system
AssigneeRayVio Corporation
InventorsDouglas A. Collins, Yitao Liao, Robert S. West
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.
Claims19
A structure comprising:
- an enlongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
- a reflective first fluid permeable structure forming a first end wall of the chamber;
- a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure;
- and
- an ultraviolet (UV) source comprising a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range, wherein
- the semiconductor device is positioned on the sidewall, wherein the semiconductor device is substantially flush with the sidewall or disposed at a lower elevation than the sidewall such that the semiconductor device does not extend into the chamber.
3 more elements
A structure comprising:
- an elongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
- a reflective first fluid permeable structure forming a first end wall of the chamber;
- a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure;
- an ultraviolet (UV) source comprising a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range, wherein the semiconductor device is positioned on the sidewall and is substantially flush with the sidewall or disposed at a lower elevation than the sidewall such that the semiconductor device does not extend into the chamber;
- and
- a photocatalytic material disposed in the chamber.
3 more elements
A structure comprising:
- an elongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
- a reflective first fluid permeable structure forming a first end wall of the chamber;
- a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure;
- and
- an ultraviolet (UV) source comprising:
- a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range;
- and
- a dome lens disposed over the semiconductor device, wherein
- the semiconductor device is positioned on the sidewall such that the dome lens protrudes through the sidewall.
6 more elements
Dependencies are inferred from the claim text.