# US 10,375,833 B2 · Methods of manufacturing packaged electronic devices with top terminations > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,375,833 B2 - Document ID: US10375833B2 - Status: Granted - Kind: B2 - Application number: 15/988,743 - Filed: 2018-05-24 - Published: 2018-09-20 - Granted: 2019-08-06 - Earliest claimed: 2014-11-21 - Assignees: NXP USA, Inc. - Applicants: NXP USA, Inc. - Inventors: Lakshminarayan Viswanathan; Audel A. Sanchez; Fernando A. Santos; Jerry L. White - Web page: https://patentgrep.com/patent/US10375833B2 ## CPC - H05K 3/284: {for encapsulating mounted components (H05K1/185 takes precedence)} - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 1/565: {using inductive elements} - H03F 3/195: in integrated circuits - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/451: the amplifier being a radio frequency amplifier - H05K 1/185: associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards - H05K 3/3421: {Leaded components} - H05K 9/0052: {Shielding other than Faraday cages} - H05K 9/0081: {Electromagnetic shielding materials, e.g. EMI, RFI shielding (H05K9/0003 takes precedence)} - H05K 2201/10166: Transistor - H05K 2201/10371: Shields or metal cases - H05K 2201/10977: Encapsulated connections - H05K 2203/1316: Moulded encapsulation of mounted components - H05K 2203/1327: Moulding over PCB locally or completely - H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H10H 20/852: Encapsulations - H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers} - H10W 72/073: {of die-attach connectors} - H10W 72/075: {of bond wires} - H10W 72/853: {On the same surface} - H10W 72/874: {On different surfaces} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/9413: {on encapsulations} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/01: Manufacture or treatment - H10W 76/45: Liquid fillings - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/753: {between laterally-adjacent chips} - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H03F: AMPLIFIERS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An embodiment of an electronic device includes a circuit component (e.g., a transistor or other component) coupled to the top surface of a substrate. Encapsulation is formed over the substrate and the component. An opening in the encapsulation extends from the encapsulation top surface to a conductive feature on the top surface of the component. A conductive termination structure within the encapsulation opening extends from the conductive feature to the encapsulation top surface. The device also may include a second circuit physically coupled to the encapsulation top surface and electrically coupled to the component through the conductive termination structure. In an alternate embodiment, the conductive termination structure may be located in a trench in the encapsulation that extends between two circuits that are embedded within the encapsulation, where the conductive termination structure is configured to reduce electromagnetic coupling between the two circuits during device operation. ## Claims ### Claim 1 A method of manufacturing an electronic device, the method comprising the steps of: coupling a transistor of an amplifier circuit to a surface of a substrate, wherein the transistor has a first die pad at a transistor top surface; coupling a first conductive termination structure to the first die pad; after coupling the first conductive termination structure to the first die pad, forming an encapsulation having an encapsulation top surface over at least a portion of the surface of the substrate and the transistor top surface, wherein the first conductive termination structure extends from the first die pad through the encapsulation to the encapsulation top surface; and physically coupling a second circuit that forms a portion of the amplifier circuit to the encapsulation top surface, wherein the second circuit is electrically coupled to the transistor through the first conductive termination structure. ### Claim 2 (depends on 1) The method of claim 1, wherein the first conductive termination structure is a solid conductive structure that is directly physically coupled to the first die pad of the transistor. ### Claim 3 (depends on 1) The method of claim 1, wherein an entirety of the first conductive termination structure is formed from a bulk conductive material. ### Claim 4 (depends on 3) The method of claim 3, wherein the bulk conductive material is selected from a thick film conductive paste, a conductive polymer, and a sintered paste. ### Claim 5 (depends on 1) The method of claim 1, further comprising: providing a second conductive termination structure extending from a second die pad of the transistor to the encapsulation top surface. ### Claim 6 (depends on 1) The method of claim 1, wherein the surface of the substrate is conductive, and the method further comprises: providing a second conductive termination structure that extends from the surface of the substrate to the encapsulation top surface. ### Claim 7 (depends on 1) The method of claim 1, wherein coupling the first conductive termination structure comprises: prior to forming the encapsulation, permanently affixing the first conductive termination structure to the first die pad exposed at the transistor top surface. ### Claim 8 A method of manufacturing an electronic device, the method comprising the steps of: coupling a transistor of an amplifier circuit to a surface of a substrate, wherein the transistor has a transistor top surface; forming an encapsulation having an encapsulation top surface over at least a portion of the surface of the substrate and the transistor top surface, wherein forming the encapsulation includes applying a termination-shaped holding pin to a first die pad exposed at the transistor top surface, forming the encapsulation in contact with the termination-shaped holding pin, and over the at least a portion of the surface of the substrate and the transistor top surface, and after forming the encapsulation, removing the termination-shaped holding pin from the first die pad, wherein the encapsulation includes an opening where the termination-shaped holding pin was located that extends from the encapsulation top surface toward the transistor, and wherein the first die pad is exposed at a bottom of the opening; providing a first conductive termination structure within the opening in the encapsulation; and physically coupling a second circuit that forms a portion of the amplifier circuit to the encapsulation top surface, wherein the second circuit is electrically coupled to the transistor through the first conductive termination structure. ### Claim 9 (depends on 8) The method of claim 8, wherein an entirety of the first conductive termination structure includes plated metal in direct contact with the first die pad, and a conductive bulk over the plated metal. ### Claim 10 (depends on 8) The method of claim 8, wherein providing the first conductive termination structure comprises: forming the first conductive termination structure in the opening in the encapsulation. ### Claim 11 A method of manufacturing an electronic device, the method comprising the steps of: coupling a transistor of an amplifier circuit to a surface of a substrate, wherein the transistor has a transistor top surface, and wherein the transistor includes a first die pad exposed at the transistor top surface; coupling a first conductive termination structure to the first die pad; forming an encapsulation having an encapsulation top surface over at least a portion of the surface of the substrate, sides of the first conductive termination structure, and the transistor top surface, wherein the first conductive termination structure extends from the first die pad to the encapsulation top surface; and physically coupling a second circuit that forms a portion of the amplifier circuit to the encapsulation top surface, wherein the second circuit is electrically coupled to the transistor through the first conductive termination structure. ### Claim 12 (depends on 11) The method of claim 11, wherein the first conductive termination structure is a solid conductive structure that is directly physically coupled to the first die pad. ### Claim 13 (depends on 11) The method of claim 11, wherein an entirety of the first conductive termination structure from the first die pad to the encapsulation top surface is formed from a bulk conductive material. ### Claim 14 (depends on 13) The method of claim 13, wherein the bulk conductive material is selected from a thick film conductive paste, a conductive polymer, and a sintered paste. ### Claim 15 (depends on 11) The method of claim 11, further comprising: providing a second conductive termination structure extending from a second die pad of the transistor to the encapsulation top surface. ### Claim 16 (depends on 11) The method of claim 11, wherein the surface of the substrate is conductive, and the method further comprises: providing a second conductive termination structure that extends from the surface of the substrate to the encapsulation top surface. ### Claim 17 (depends on 11) The method of claim 11, wherein providing the first conductive termination structure comprises: prior to forming the encapsulation, permanently affixing the first conductive termination structure to the first die pad. ### Claim 18 (depends on 11) The method of claim 11, wherein the second circuit includes one or more components of an input impedance matching circuit. ### Claim 19 (depends on 11) The method of claim 11, wherein the second circuit includes one or more components of an output impedance matching circuit. ### Claim 20 A method of manufacturing an electronic device, the method comprising the steps of: coupling a transistor of an amplifier circuit to a surface of a substrate, wherein the transistor has a transistor top surface, and wherein the transistor includes a first die pad exposed at the transistor top surface; forming an encapsulation having an encapsulation top surface over at least a portion of the surface of the substrate and the transistor top surface, wherein the encapsulation includes an opening extending from the encapsulation top surface to the first die pad of the transistor, and wherein forming the encapsulation includes applying a termination-shaped holding pin to the first die pad, forming the encapsulation in contact with the termination-shaped holding pin, and over the at least a portion of the surface of the substrate and the transistor top surface, and after forming the encapsulation, removing the termination-shaped holding pin from the first die pad, wherein the encapsulation includes the opening where the termination-shaped holding pin was located, and wherein the first die pad is exposed at a bottom of the opening; providing a first conductive termination structure within the opening in the encapsulation, wherein the first conductive termination structure extends from the first die pad to the encapsulation top surface; and physically coupling a second circuit that forms a portion of the amplifier circuit to the encapsulation top surface, wherein the second circuit is electrically coupled to the transistor through the first conductive termination structure. ### Claim 21 (depends on 20) The method of claim 20, wherein an entirety of the first conductive termination structure from the first die pad to the encapsulation top surface includes plated metal in direct contact with the first die pad, and a conductive bulk over the plated metal. ### Claim 22 (depends on 20) The method of claim 20, wherein providing the first conductive termination structure comprises: forming the first conductive termination structure in the opening in the encapsulation.