# US 10,375,698 B2 · Memory system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,375,698 B2 - Document ID: US10375698B2 - Status: Granted - Kind: B2 - Application number: 15/650,174 - Filed: 2017-07-14 - Published: 2017-11-02 - Granted: 2019-08-06 - Earliest claimed: 2012-05-16 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yutaka Higo; Masanori Hosomi; Hiroyuki Ohmori; Kazuhiro Bessho; Tetsuya Asayama; Kazutaka Yamane; Hiroyuki Uchida - Web page: https://patentgrep.com/patent/US10375698B2 ## CPC - H04W 72/51: based on terminal or device properties - G11C 5/08: for interconnecting magnetic elements, e.g. toroidal cores - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11C 11/1675: {Writing or programming circuits or methods} - G11C 11/1697: {Power supply circuits} - H04W 72/121: for groups of terminals or users - H04W 72/542: using measured or perceived quality - H10B 61/22: {of the field-effect transistor [FET] type} - H10N 50/10: Magnetoresistive devices - H10N 50/85: Materials of the active region - H04W: WIRELESS COMMUNICATION NETWORKS (broadcast communication H04H; communication systems using wireless links for non-selective communication, e.g. wireless extensions H04M1/72) - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A memory system is provided. The memory system includes a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer. ## Claims ### Claim 1 A memory system, comprising: a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer. ### Claim 2 (depends on 1) The memory system according to claim 1, wherein a current is configured to flow in a lamination direction between the memory layer and the magnetic fixed layer. ### Claim 3 (depends on 2) The memory system according to claim 2, further comprising the plurality of the word lines and the bit lines configured to supply the current to the memory area. ### Claim 4 (depends on 3) The memory system according to claim 3, wherein the control area is configured to control a current supply to the memory area via the plurality of the word lines and the bit lines when a period for flowing a recording current to the memory area to be recorded and a period for flowing the standby current to the memory area to be recorded are overlapped. ### Claim 5 (depends on 4) The memory system according to claim 4, wherein the control area is configured to store information by flowing the standby current at a predetermined level to the memory area to incline the magnetization direction of the memory layer from a direction perpendicular to a film surface and flowing the recording current that is higher than the standby current to change the magnetization direction of the memory layer. ### Claim 6 (depends on 5) The memory system according to claim 5, wherein each of the memory cells includes a cap layer, and the memory layer includes: a first ferromagnetic layer, a connecting layer and a second ferromagnetic layer being laminated in this order, wherein the first ferromagnetic layer is magnetically connected to the second ferromagnetic layer via the connecting layer, wherein the first ferromagnetic layer is in contact with an intermediate layer, wherein the second ferromagnetic layer is in contact with the cap layer, wherein one of the first ferromagnetic layer and the second first ferromagnetic layer is an in-face magnetization layer being predominant in the in-face magnetization, and wherein the other is a perpendicular magnetization layer being predominant in the perpendicular magnetization. ### Claim 7 (depends on 6) The memory system according to claim 6, wherein in the memory layer, a connecting intensity between the first ferromagnetic layer and the second ferromagnetic layer via the connection layer is set such that both magnetizations of the first ferromagnetic layer and the second ferromagnetic layer direct to the perpendicular direction in an equilibrium state where no current in the lamination direction flows to the memory area. ### Claim 8 (depends on 6) The memory system according to claim 6, wherein the first ferromagnetic layer is the in-face magnetization layer, and the second ferromagnetic layer is the perpendicular magnetization layer. ### Claim 9 (depends on 8) The memory system according to claim 8, wherein while the standby current flows, an angle between the magnetization of the first ferromagnetic layer and the direction perpendicular to the film surface is greater than an angle between the magnetization of the second ferromagnetic layer and the direction perpendicular to the film surface. ### Claim 10 (depends on 6) The memory system according to claim 6, wherein the first ferromagnetic layer is the perpendicular magnetization layer, and the second ferromagnetic layer is the in-face magnetization layer. ### Claim 11 (depends on 10) The memory system according to claim 10, wherein while the standby current flows, an angle between the magnetization of the first ferromagnetic layer and the direction perpendicular to the film surface is smaller than an angle between the magnetization of the second ferromagnetic layer and the direction perpendicular to the film surface. ### Claim 12 (depends on 6) The memory system according to claim 6, wherein the cap layer includes an oxide layer. ### Claim 13 (depends on 6) The memory system according to claim 6, wherein the first ferromagnetic layer and the second ferromagnetic layer include Co—Fe—B layers. ### Claim 14 (depends on 1) The memory system according to claim 1, wherein the intermediate layer includes a tunnel insulation layer.