# US 10,375,333 B2 · Image sensing device capable of sensing images and temperatures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,375,333 B2 - Document ID: US10375333B2 - Status: Granted - Kind: B2 - Application number: 15/792,770 - Filed: 2017-10-25 - Published: 2019-04-25 - Granted: 2019-08-06 - Earliest claimed: 2017-10-25 - Assignees: Novatek Microelectronics Corp. - Applicants: Novatek Microelectronics Corp. - Inventors: Dong-Hai Huang - Web page: https://patentgrep.com/patent/US10375333B2 ## CPC - H04N 25/766: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power - H04N 25/709: Circuitry for control of the power supply - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/807: {Pixel isolation structures} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An image sensing device including a plurality of pixel circuits arranged in an array and configured to sense images and temperatures is provided. Each of the pixel circuits includes a photo sensing device, a transmission gate transistor, a reset transistor and an output stage circuit. The first end of the transmission gate transistor is coupled to the first end of the photo sensing device. The second end of the photo sensing device is coupled to a first voltage or a second voltage. The first end of the reset transistor is coupled to a first power, a first current bias or a second current bias. The second end of the reset transistor is coupled to the second end of the transmission gate transistor. The input end of the output stage circuit is coupled to the second end of the reset transistor. The output end of the output stage circuit outputs a temperature sensing signal or an image sensing signal. ## Claims ### Claim 1 An image sensing device comprising: a plurality of pixel circuits arranged in an array and configured to sense images and temperatures, wherein each of the pixel circuits comprises: a photo sensing device comprising a first end and a second end, wherein the second end of the photo sensing device is coupled to a first voltage or a second voltage; a transmission gate transistor comprising a first end, a second end and a control end, wherein the first end of the transmission gate transistor is coupled to the first end of the photo sensing device, and the control end of the transmission gate transistor is coupled to a first control signal; a reset transistor comprising a first end, a second end and a control end, wherein the first end of the reset transistor is coupled to a first power, a first current bias or a second current bias, the second end of the reset transistor is coupled to the second end of the transmission gate transistor, and the control end of the reset transistor is coupled to a second control signal; and an output stage circuit comprising an input end and an output end, wherein the input end of the output stage circuit is coupled to the second end of the reset transistor, and the output end of the output stage circuit outputs a temperature sensing signal or an image sensing signal. ### Claim 2 (depends on 1) The image sensing device according to claim 1, wherein the pixel circuit operates in a first mode or a second mode, when the pixel circuit operates in the first mode, the output end of the output stage circuit outputs the temperature sensing signal; and when the pixel circuit operates in the second mode, the output end of the output stage circuit outputs the image sensing signal. ### Claim 3 (depends on 2) The image sensing device according to claim 2, wherein when the pixel circuit operates in the first mode, the first end of the reset transistor is coupled to the first current bias or the second current bias, and the second end of the photo sensing device is coupled to the first voltage. ### Claim 4 (depends on 2) The image sensing device according to claim 2, wherein when the pixel circuit operates in the second mode, the first end of the reset transistor is coupled to the first power, and the second end of the photo sensing device is coupled to the second voltage. ### Claim 5 (depends on 1) The image sensing device according to claim 1, wherein the second voltage is a ground voltage or a voltage lower than the first voltage. ### Claim 6 (depends on 1) The image sensing device according to claim 1, wherein the photo sensing device comprises a photodiode, and the photodiode and the transmission gate transistor are formed in a same well. ### Claim 7 (depends on 1) The image sensing device according to claim 1, wherein the temperature sensing signal is generated according to the first current bias and the second current bias. ### Claim 8 (depends on 1) The image sensing device according to claim 1, wherein the output stage circuit comprises: a source follower comprising a first end, a second end and a control end, wherein the first end of the source follower is coupled to a second power, and the control end of the source follower serves as the input end of the output stage circuit and is coupled to the second end of the reset transistor; and a row select transistor comprising a first end, a second end and a control end, wherein the first end of the row select transistor is coupled to the second end of the source follower, the second end of the row select transistor serves as the output end of the output stage circuit and is coupled to a third current bias, and the control end of the row select transistor is coupled to a row select signal. ### Claim 9 An image sensing device comprising: a plurality of pixel circuits arranged in an array and configured to sense images and temperatures, wherein each of the pixel circuits comprises: a photo sensing device comprising a first end and a second end, wherein the second end of the photo sensing device is coupled to a first voltage or a second voltage; a transmission gate transistor comprising a first end, a second end and a control end, wherein the first end of the transmission gate transistor is coupled to the first end of the photo sensing device, and the control end of the transmission gate transistor is coupled to a first control signal; a reset transistor comprising a first end, a second end and a control end, wherein the first end of the reset transistor is coupled to a first power, the second end of the reset transistor is coupled to the second end of the transmission gate transistor, and the control end of the reset transistor is coupled to a second control signal; a function select transistor comprising a first end, a second end and a control end, wherein the first end of the function select transistor is coupled to the second end of the transmission gate transistor, the second end of the function select transistor is coupled to a first current bias or a second current bias, and the control end of the function select transistor is coupled to a third control signal; and an output stage circuit comprising an input end and an output end, wherein the input end of the output stage circuit is coupled to the second end of the reset transistor, and the output end of the output stage circuit outputs a temperature sensing signal or an image sensing signal. ### Claim 10 (depends on 9) The image sensing device according to claim 9, wherein the pixel circuit operates in a first mode or a second mode, when the pixel circuit operates in the first mode, the output end of the output stage circuit outputs the temperature sensing signal; and when the pixel circuit operates in the second mode, the output end of the output stage circuit outputs the image sensing signal. ### Claim 11 (depends on 10) The image sensing device according to claim 10, wherein when the pixel circuit operates in the first mode, the second end of the function select transistor is coupled to the first current bias or the second current bias, and the second end of the photo sensing device is coupled to the first voltage. ### Claim 12 (depends on 10) The image sensing device according to claim 10, wherein when the pixel circuit operates in the second mode, the second end of the function select transistor is coupled to the first power, and the second end of the photo sensing device is coupled to the second voltage. ### Claim 13 (depends on 9) The image sensing device according to claim 9, wherein the second voltage is a ground voltage or a voltage lower than the first voltage. ### Claim 14 (depends on 9) The image sensing device according to claim 9, wherein the photo sensing device comprises a photodiode, and the photodiode and the transmission gate transistor are formed in a same well. ### Claim 15 (depends on 9) The image sensing device according to claim 9, wherein the temperature sensing signal is generated according to the first current bias and the second current bias. ### Claim 16 (depends on 9) The image sensing device according to claim 9, wherein the output stage circuit comprises: a source follower comprising a first end, a second end and a control end, wherein the first end of the source follower is coupled to a second power, and the control end of the source follower serves as the input end of the output stage circuit and is coupled to the second end of the reset transistor; and a row select transistor comprising a first end, a second end and a control end, wherein the first end of the row select transistor is coupled to the second end of the source follower, the second end of the row select transistor serves as the output end of the output stage circuit and is coupled to a third current bias, and the control end of the row select transistor is coupled to a row select signal.