# US 10,374,599 B2 · Delay-time correction circuit, semiconductor-device drive circuit, and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,599 B2 - Document ID: US10374599B2 - Status: Granted - Kind: B2 - Application number: 15/377,390 - Filed: 2016-12-13 - Published: 2017-11-23 - Granted: 2019-08-06 - Earliest claimed: 2016-05-19 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Kazuya Hokazono; Akihisa Yamamoto; Dong Wang - Web page: https://patentgrep.com/patent/US10374599B2 ## CPC - H03K 17/284: in field effect transistor switches - H02H 3/247: having timing means - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02M 1/38: Means for preventing simultaneous conduction of switches - H03K 17/08: Modifications for protecting switching circuit against overcurrent or overvoltage - H03K 17/162: {without feedback from the output circuit to the control circuit} - H03K 17/18: Modifications for indicating state of switch - H03K 17/223: {in field-effect transistor switches} - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H) - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation. ## Claims ### Claim 1 A delay-time correction circuit configured to delay an input signal that is externally input for generating a pre-drive signal to a drive unit generating a drive signal for a semiconductor switching element, said delay-time correction circuit comprising: a transition-change sensor configured to sense a transition change in one of a turn-on operation and turn-off operation of said semiconductor switching element; a correction-signal generator configured to generate a correction signal in response to said transition change sensed by said transition-change sensor and to said input signal; and a delay output unit configured to generate an output signal corresponding to said pre-drive signal by delaying said input signal using said correction signal, wherein said delay output unit is configured to delay said output signal that instructs the other of a turn-on operation and turn-off operation, from said input signal, in accordance with a length of a period for said transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation. ### Claim 2 (depends on 1) The delay-time correction circuit according to claim 1, wherein said transition-change sensor is configured to sense said transition change of said semiconductor switching element in response to a change in a gate voltage that is applied to said semiconductor switching element. ### Claim 3 (depends on 1) The delay-time correction circuit according to claim 1, wherein said transition-change sensor is configured to sense said transition change of said semiconductor switching element in response to a change in a voltage between main terminals of said semiconductor switching element. ### Claim 4 (depends on 1) The delay-time correction circuit according to claim 1, wherein said transition-change sensor is configured to sense said transition change of said semiconductor switching element in response to a change in a current between main terminals of said semiconductor switching element. ### Claim 5 (depends on 1) The delay-time correction circuit according to claim 1, wherein the one of a turn-on operation and turn-off operation is a turn-on operation. ### Claim 6 (depends on 1) The delay-time correction circuit according to claim 1, wherein the one of a turn-on operation and turn-off operation is a turn-off operation. ### Claim 7 (depends on 1) The delay-time correction circuit according to claim 1, wherein said transition-change sensor is further configured to sense a transition change in the other of a turn-on operation and turn-off operation of said semiconductor switching element, and wherein said delay output unit is configured to delay said output signal that instructs the one of a turn-on operation and turn-off operation, from said input signal, in accordance with a length of a period for said transition change in the other of a turn-on operation and turn-off operation that is performed immediately before the one of a turn-on operation and turn-off operation. ### Claim 8 (depends on 1) The delay-time correction circuit according to claim 1, wherein said delay output unit comprises a capacitance that is charged in accordance with said period for said transition change of said semiconductor switching element, and is configured to determine said output signal by comparing a voltage value of said capacitance and a predetermined capacitance voltage threshold, and wherein a lower limit of said voltage value of said capacitance is clamped at a value between said predetermined capacitance voltage threshold and a voltage of zero. ### Claim 9 (depends on 1) The delay-ti circuit according to claim 1, wherein said transition-change sensor is configured to sense said transition change of said semiconductor switching element by comparing a measurement value of said semiconductor switching element and a measurement threshold, and wherein said transition-change sensor uses different values as said measurement threshold in accordance with whether a to-be-sensed transition change belongs to a turn-on operation or a turn-off operation. ### Claim 10 (depends on 1) A semiconductor-device drive circuit comprising: said delay-time correction circuit according to claim 1; and said drive unit. ### Claim 11 (depends on 10) The semiconductor-device drive circuit according to claim 10, further comprising an input-and-output delay adjustment unit configured to adjust a delay of said output signal from said input signal in accordance with a time delayed by said delay output unit. ### Claim 12 (depends on 10) The semiconductor-device drive circuit according to claim 10, wherein said delay output unit comprises a capacitance that is charged in accordance with said period for said transition change of said semiconductor switching element, and wherein semiconductor-device drive circuit further comprises a protection circuit that is capable of performing a protective operation in which a voltage of said capacitance is set to be a predetermined voltage. ### Claim 13 (depends on 12) The semiconductor-device drive circuit according to claim 12, wherein said protection circuit is configured to perform said protective operation when a power supply voltage that is supplied to said delay-time correction circuit falls below a power-supply-voltage threshold, and wherein a maximum voltage that is obtained as a result of charge of said capacitance of said delay output unit is set to be lower than said power-supply-voltage threshold. ### Claim 14 (depends on 10) A semiconductor device comprising: said semiconductor-device drive circuit according to claim 10; and said semiconductor switching element. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein said semiconductor switching element comprises a portion made of silicon carbide. ### Claim 16 A semiconductor-device drive circuit configured to drive a plurality of semiconductor switching elements that are connected in parallel with each other, said semiconductor-device drive circuit comprising a plurality of drive circuit units that are separately connected to said plurality of semiconductor switching elements, each of said plurality of drive circuit units comprising a drive unit configured to generate a drive signal, and a delay-time correction circuit configured to delay an input signal that is externally input for generating a pre-drive signal to said drive unit, said delay-time correction circuit comprising a transition-change sensor configured to sense a transition change in one of a turn-on operation and turn-off operation of each of said plurality of semiconductor switching elements, a correction-signal generator configured to generate a correction signal in response to said transition change sensed by said transition-change sensor and to said input signal, and a delay output unit configured to generate an output signal corresponding to said pre-drive signal by delaying said input signal using said correction signal, wherein said delay output unit is configured to delay said output signal that instructs the other of a turn-on operation and turn-off operation, from said input signal, in accordance with a length of a period for said transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.