# US 10,374,591 B2 · Systems and methods for a gate drive circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,591 B2 - Document ID: US10374591B2 - Status: Granted - Kind: B2 - Application number: 15/397,443 - Filed: 2017-01-03 - Published: 2018-07-05 - Granted: 2019-08-06 - Earliest claimed: 2017-01-03 - Assignees: General Electric Company - Applicants: General Electric Company - Inventors: Ramanujam Ramabhadran; Sayan Acharya; Han Peng; Maja Harfman Todorovic; Ahmed Elasser; Robert Thomas - Web page: https://patentgrep.com/patent/US10374591B2 ## CPC - H03K 17/063: {in field-effect transistor switches} - H03K 17/08122: {in field-effect transistor switches} - H03K 17/163: {Soft switching} - H03K 17/08128: {in composite switches} - H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] - H10D 62/80: characterised by the materials - H10D 62/8325: {Silicon carbide} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Systems and methods provided herein relate to a gate drive circuit for controlling operation of a wide bandgap semiconductor switch. The systems and methods receive a control signal and configuring an operation signal configured to activate a wide bandgap switch (WBG switch). A profile of the operation signal being based on electrical characteristics of first and second shaping circuits. The systems and methods further deliver the operation signal to the WBG switch. ## Claims ### Claim 1 A gate drive system comprising: a wide bandgap switch (WBG switch); a control switch conductively coupled between a first terminal and a gate terminal of the WBG switch, wherein the WBG switch and the control switch are configured to have a common threshold voltage; first and second shaping circuits conductively coupled to the control switch and the gate terminal of the WBG switch, wherein the first and second shaping circuits and the control switch are configured to define an operation signal, the operation signal being configured to activate the WBG switch, a profile of the operation signal being based on electrical characteristics of the first and second shaping circuits; wherein the first shaping circuit is connected across the first terminal and a second terminal of the control switch; and wherein the second shaping circuit is connected between the gate terminal of the WBG switch and the second terminal of the control switch. ### Claim 2 (depends on 1) The gate drive system of claim 1, wherein the operation signal is formed by three shaping phases, a first shaping phase is defined by the electrical characteristics of the first and second shaping circuits, a second shaping phase is defined by the electrical characteristics of the second shaping circuit and the control switch, and a third shaping phase is defined by the control switch. ### Claim 3 (depends on 2) The gate drive system of claim 2, wherein during the second shaping phase the control switch is configured to operate within a Miller plateau. ### Claim 4 (depends on 2) The gate drive system of claim 2, wherein the second shaping circuit includes a capacitor configured in parallel with a resistor, a resistance of the resistor is configured to define an ascending curve of the second shaping phase. ### Claim 5 (depends on 2) The gate drive system of claim 2, wherein the control switch is configured to clamp a voltage of the operation signal during the third shaping phase. ### Claim 6 (depends on 2) The gate drive system of claim 2, wherein an electrical characteristic of the second shaping phase is configured to operate the WBG switch within a Miller plateau. ### Claim 7 (depends on 1) The gate drive system of claim 1, a gate terminal of the control switch is conductively coupled to a voltage source. ### Claim 8 (depends on 7) The gate drive system of claim 7, wherein the voltage source is a diode, a capacitor, or a control signal. ### Claim 9 (depends on 1) The gate drive system of claim 1, wherein the first and second shaping circuits are configured to have a common temperature coefficient. ### Claim 10 (depends on 1) The gate drive system of claim 1, further comprising a shut off circuit conductively coupled to the gate terminal of the WBG switch and the first terminal, wherein the shut off circuit is configured to clamp the gate terminal. ### Claim 11 (depends on 1) The gate drive system of claim 1, wherein the WBG switch and the control include Silicon Carbide, Aluminum Gallium Nitride, Gallium Nitride, or Gallium Oxide. ### Claim 12 A method, comprising: receiving a control signal at a first terminal of a control switch; configuring an operation signal via the control switch, wherein the operation signal is configured to activate a wide bandgap switch (WBG switch), wherein a profile of the operation signal is based on electrical characteristics of first and second shaping circuits; delivering the operation signal to the WBG switch; wherein the first shaping circuit is connected across the first terminal and a second terminal of the control switch; and wherein the second shaping circuit is connected between a gate terminal of the WBG switch and the second terminal of the control switch. ### Claim 13 (depends on 12) The method of claim 12, wherein the configuring operation includes forming three shaping phases of the operation signal, the first shaping phase is defined by the electrical characteristics of the first and second shaping circuits, the second shaping phase is defined by the electrical characteristics of the second shaping circuit and a control switch, and a third shaping phase is defined by the control switch. ### Claim 14 (depends on 13) The method of claim 13, wherein the second shaping circuit includes a capacitor configured in parallel with a resistor, a resistance of the resistor is configured to define a curve of the second shaping phase. ### Claim 15 (depends on 13) The method of claim 13, further comprising clamping a voltage of the operation signal during the third shaping phase. ### Claim 16 (depends on 13) The method of claim 13, further comprising operating the WBG switch within a Miller plateau during the second shaping phase. ### Claim 17 (depends on 12) The method of claim 12, further comprising delivering electrical power to a gate terminal of the control switch, wherein the electrical power is delivered from a diode, a capacitor, or a control signal. ### Claim 18 (depends on 12) The method of claim 12, wherein the first and second shaping circuits are configured to have a common temperature coefficient. ### Claim 19 A gate drive system comprising: a wide bandgap switch (WBG switch); a control switch conductively coupled between a first terminal and a gate terminal of the WBG switch, wherein the WBG switch and the control switch are configured to have a common activation threshold, the control switch having a gate terminal conductively coupled to a voltage source, the voltage source being a diode, a capacitor, or a control signal; first and second shaping circuits conductively coupled to the control switch and the gate terminal of the WBG switch, wherein the first and second shaping circuits and the control switch are configured to define an operation signal, the operation signal being formed by three shaping phases, a first shaping phase is defined by the electrical characteristics of the first and second shaping circuits, a second shaping phase is defined by the electrical characteristics of the second shaping circuit and the control switch, and a third shaping phase is defined by the control switch, wherein the operation signal is configured to activate the WBG switch, a profile of the operation signal being based on electrical characteristics of the first and second shaping circuits; wherein the first shaping circuit is connected across the first terminal and a second terminal of the control switch; and wherein the second shaping circuit is connected between the gate terminal of the WBG switch and the second terminal of the control switch. ### Claim 20 (depends on 19) The gate drive system of claim 19, wherein the WBG switch and the control include Silicon Carbide, Aluminum Gallium Nitride, Gallium Nitride, or Gallium Oxide.