# US 10,374,570 B2 · Method of manufacturing an acoustic wave element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,570 B2 - Document ID: US10374570B2 - Status: Granted - Kind: B2 - Application number: 15/430,865 - Filed: 2017-02-13 - Published: 2017-06-01 - Granted: 2019-08-06 - Earliest claimed: 2014-07-28 - Assignees: Skyworks Filter Solutions Japan Co., Ltd. - Applicants: Skyworks Filter Solutions Japan Co., Ltd. - Inventors: Tomohiro Iwasaki; Hiroyuki Nakamura - Web page: https://patentgrep.com/patent/US10374570B2 ## CPC - H03H 9/725: {Duplexers} - H01P 1/2135: {using strip line filters (H01P1/2131 takes precedence)} - H01P 5/12: Coupling devices having more than two ports (H01P5/04 takes precedence) - H03H 3/08: for the manufacture of resonators or networks using surface acoustic waves - H03H 9/02834: {of temperature influence (cut angles H03H9/02543)} - H03H 9/02992: {Details of bus bars, contact pads or other electrical connections for finger electrodes} - H03H 9/14541: {Multilayer finger or busbar electrode} - H03H 9/25: Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} - H03H 9/64: using surface acoustic waves - H03H 9/6433: {Coupled resonator filters} - H01P 11/007: {Manufacturing frequency-selective devices (resonators H01P11/008)} - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B) ## Abstract A method of manufacturing an acoustic wave element includes simultaneously forming a plurality of electrodes on a piezoelectric substrate, the plurality of electrodes including first and second IDT electrodes and a connection electrode, forming an insulation over the plurality of electrodes and the piezoelectric substrate, the insulation having a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode, processing a first portion of the insulation over the first IDT electrode and a second portion of the insulation over the connection electrode to reduce a thickness of the first and second portions of the insulation to a second thickness, and processing a third portion of the insulation over the surface of the second IDT electrode to reduce the first thickness of the third portion to a third thickness, the third thickness being greater than the second thickness. ## Claims ### Claim 1 A method of manufacturing an acoustic wave element comprising: simultaneously forming a plurality of electrodes on a surface of a piezoelectric substrate, the plurality of electrodes including a first interdigital transducer (IDT) electrode, a second IDT electrode, and a connection electrode; forming an insulation on surfaces of the plurality of electrodes and on the surface of the piezoelectric substrate, the insulation having a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode; processing a first portion of the insulation over the surface of the first IDT electrode and a second portion of the insulation over the surface of the connection electrode to reduce a thickness of the first and second portions of the insulation in a direction perpendicular to the surface of the piezoelectric substrate to a second thickness, the second thickness being less than the first thickness; and processing a third portion of the insulation over the surface of the second IDT electrode to reduce the first thickness of the third portion in a direction perpendicular to the surface of the piezoelectric substrate to a third thickness, the third thickness being greater than the second thickness. ### Claim 2 (depends on 1) The method of claim 1 wherein processing the first, second, and third portions of the insulation includes etching the first, second, and third portions of the insulation. ### Claim 3 (depends on 1) The method of claim 1 further comprising: etching the first portion of the insulation over the surface of the connection electrode to provide an opening and to expose a region of the connection electrode; and forming an extraction electrode in the opening, the extraction electrode contacting and being electrically connected to the connection electrode. ### Claim 4 (depends on 3) The method of claim 3 further comprising forming an external terminal electrode contacting and electrically connected to the extraction electrode. ### Claim 5 (depends on 4) The method of claim 4 wherein forming the extraction electrode and forming the external terminal electrode include forming the extraction electrode and the external terminal electrode using a same material used to form the connection electrode. ### Claim 6 (depends on 1) The method of claim 1 wherein forming the plurality of electrodes includes depositing at least one layer of a metal material using thin film deposition. ### Claim 7 (depends on 1) The method of claim 1 wherein forming the insulation includes depositing a layer of silicon nitride. ### Claim 8 (depends on 1) The method of claim 1 wherein forming the insulation includes depositing an oxide material on the surfaces of the plurality of electrodes and on the surface of the piezoelectric substrate. ### Claim 9 (depends on 1) The method of claim 1 further comprising forming a wiring electrode on the insulation, the wiring electrode being electrically insulated from the connection electrode by the insulation. ### Claim 10 A method of manufacturing an acoustic wave element comprising: simultaneously forming a plurality of electrodes on a surface of a piezoelectric substrate, the plurality of electrodes including a first interdigital transducer (IDT) electrode, a second IDT electrode, and a connection electrode; forming an insulation on surfaces of the plurality of electrodes and the surface of the piezoelectric substrate; processing a first portion of the insulation over a surface of the second IDT electrode to reduce a thickness of the first portion in a direction perpendicular to the surface of the piezoelectric substrate to a first thickness; and processing a second portion of the insulation over a surface of the connection electrode and a third portion of the insulation over a surface of the first IDT electrode to reduce a thickness of the second and third portions in a direction perpendicular to the surface of the piezoelectric substrate to a second thickness, the second thickness being less than the first thickness. ### Claim 11 (depends on 10) The method of claim 10 wherein processing the first, second, and third portions of the insulation includes etching the first, second, and third portions of the insulation. ### Claim 12 (depends on 10) The method of claim 10 wherein forming the plurality of electrodes is performed using thin film deposition. ### Claim 13 (depends on 12) The method of claim 12 wherein forming the plurality of electrodes includes depositing at least one layer of material, the material being selected from a group consisting of aluminum, gold, titanium, tungsten, molybdenum, platinum, chromium, and alloys thereof. ### Claim 14 (depends on 10) The method of claim 10 wherein forming the insulation includes depositing an oxide material. ### Claim 15 (depends on 10) The method of claim 10 wherein forming the insulation includes depositing a layer of silicon nitride. ### Claim 16 (depends on 10) The method of claim 10 further comprising: etching the second portion of the insulation to form an opening and to expose the surface of the connection electrode; and forming an extraction electrode in the opening, the extraction electrode contacting and being electrically connected to the connection electrode. ### Claim 17 (depends on 16) The method of claim 16 further comprising forming an external terminal electrode contacting and electrically connected to the extraction electrode. ### Claim 18 (depends on 10) The method of claim 10 wherein simultaneously forming the plurality of electrodes on the surface of the piezoelectric substrate includes forming a third IDT electrode. ### Claim 19 (depends on 18) The method of claim 18 further comprising forming a wiring electrode on the insulation, the wiring electrode being electrically insulated from the connection electrode by the insulation and electrically connected to the third IDT electrode. ### Claim 20 A method of manufacturing an acoustic wave element comprising: patterning at least one mask layer disposed on a surface of a piezoelectric substrate using photolithography; depositing, using thin film deposition, a plurality of electrodes on the surface of the piezoelectric substrate at locations corresponding to a pattern of the at least one mask layer, the plurality of electrodes including a first interdigital transducer (IDT) electrode, a second IDT electrode, and a connection electrode; depositing an insulation on surfaces of the plurality of electrodes and the surface of the piezoelectric substrate, the insulation being deposited with a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode; and etching a first portion of the insulation over the first IDT electrode and a second portion of the insulation over the connection electrode to reduce a thickness of the first and second portions in the direction perpendicular to the surface of the piezoelectric substrate to a second thickness, the second thickness being less than the first thickness.