# US 10,374,558 B1 · Wideband distributed power amplifier utilizing metamaterial transmission line conception with impedance transformation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,558 B1 - Document ID: US10374558B1 - Status: Granted - Kind: B1 - Application number: 15/966,935 - Filed: 2018-04-30 - Granted: 2019-08-06 - Earliest claimed: 2018-04-30 - Assignees: Speedlink Technology Inc. - Applicants: Speed Wireless Technology Inc. - Inventors: Che-Chun Kuo; Taiyun Chi; Thomas Chen - Web page: https://patentgrep.com/patent/US10374558B1 ## CPC - H03F 1/565: {using inductive elements} - H03F 3/195: in integrated circuits - H03F 3/213: in integrated circuits - H03G 3/3042: {in modulators, frequency-changers, transmitters or power amplifiers} - H03H 7/383: {comprising distributed impedance elements together with lumped impedance elements} - H04L 7/0331: {with a digital phase-locked loop [PLL] processing binary samples, e.g. add/subtract logic for correction of receiver clock (H04L7/0337 takes precedence)} - H04L 27/0014: {Carrier regulation (of chaotic carriers H04L27/001; for multicarrier receivers H04L27/2657)} - H03F 2200/111: the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/255: Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation - H03F 2200/267: A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit - H03F 2200/336: A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/423: Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation - H03F 2200/451: the amplifier being a radio frequency amplifier - H04B 1/005: {adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges} - H04L 2027/0016: {Stabilisation of local oscillators} - H03F: AMPLIFIERS - H03G: CONTROL OF AMPLIFICATION - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H04L: TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION (arrangements common to telegraphic and telephonic communication H04M) - H04B: TRANSMISSION ## Abstract A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency. ## Claims ### Claim 1 A power amplifier used in a wideband radio frequency (RF) circuit implemented in an integrated circuit (IC), the power amplifier comprising: a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency; an input metamaterial transmission line coupled to a gate terminal of the transistor, wherein the input metamaterial transmission line includes a first inductor-capacitor (LC) circuit formed based on metamaterial, wherein the first LC circuit resonates at a first resonant frequency equaled to or higher than the higher operating frequency; and an output metamaterial transmission line coupled to a drain terminal of the transistor, wherein the output metamaterial transmission line includes a second LC circuit and a third LC circuit to form a composite metamaterial transmission line, wherein the second LC circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency, and wherein the third LC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency. ### Claim 2 (depends on 1) The power amplifier of claim 1, wherein the transistor, the input metamaterial transmission line, and the output metamaterial transmission line are integrated as a part of the IC. ### Claim 3 (depends on 1) The power amplifier of claim 1, wherein the first LC circuit comprises a first capacity (CR2) coupled in parallel to the transistor and a first inductor (LR2) coupled in series to the transistor. ### Claim 4 (depends on 3) The power amplifier of claim 3, wherein the CR2 is approximately 55 femtofarad (fF), and wherein the LR2 is approximately 0.55 nanohenry (nH). ### Claim 5 (depends on 3) The power amplifier of claim 3, wherein an impedance of the input metamaterial transmission line circuit relatively matches a predetermined input impedance associated with the transistor. ### Claim 6 (depends on 5) The power amplifier of claim 5, wherein the LR2 and the CR2 are configured such that the impedance of the input metamaterial transmission line circuit relatively matches a squared-root of LR2/CR2. ### Claim 7 (depends on 5) The power amplifier of claim 5, wherein the predetermined input impedance is approximately 50 ohms. ### Claim 8 (depends on 1) The power amplifier of claim 1, wherein an impedance of the output metamaterial transmission line relatively matches a predetermined output impedance associated with the transistor. ### Claim 9 (depends on 8) The power amplifier of claim 8, wherein the predetermined output impedance is approximately 50 ohms. ### Claim 10 (depends on 3) The power amplifier of claim 3, wherein the second LC circuit comprises a second inductor (LL1), a second capacitor (CL1), and a third inductor (LL1) having an identical inductance value as of the second inductor. ### Claim 11 (depends on 10) The power amplifier of claim 10, wherein the LL1 and the CL1 are configured such that the impedance of the output metamaterial transmission line relatively matches a squared-root of LL1/CL1. ### Claim 12 (depends on 10) The power amplifier of claim 10, wherein the CR1 is approximately 55 femtofarad (fF), and wherein the LR1 is approximately 0.55 nanohenry (nH). ### Claim 13 (depends on 10) The power amplifier of claim 10, wherein the third LC circuit comprises a third capacitor (CR1), a fourth inductor (LR1), and a fourth capacitor (CR1) having an identical capacitance value as of the third capacitor. ### Claim 14 (depends on 13) The power amplifier of claim 13, wherein the LR1 and the CR1 are configured such that the impedance of the output transmission line circuit relatively matches a squared-root of LR1/CR1. ### Claim 15 (depends on 13) The power amplifier of claim 13, wherein the CL1 is approximately 120 fF, and wherein LL1 is approximately 0.285 nH. ### Claim 16 (depends on 13) The power amplifier of claim 13, wherein the second LC circuit represents a left-hand metamaterial transmission line, and wherein the third LC circuit represents a right-hand metamaterial transmission line. ### Claim 17 (depends on 16) The power amplifier of claim 16, wherein the third capacitor is coupled to the second inductor in parallel. ### Claim 18 (depends on 17) The power amplifier of claim 17, wherein the second capacitor and the fourth inductor are coupled in series. ### Claim 19 (depends on 18) The power amplifier of claim 18, wherein the fourth capacitor and the third inductor are coupled in parallel. ### Claim 20 (depends on 19) The power amplifier of claim 19, wherein the second capacitor and the fourth inductor coupled in series are coupled between parallel coupled the third capacitor and the second inductor and the parallel coupled fourth capacitor and the third inductor to form a composite metamaterial transmission line.