# US 10,374,553 B2 · Microwave transmitter with improved information throughput

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- Number: US 10,374,553 B2
- Document ID: US10374553B2
- Status: Granted
- Kind: B2
- Application number: 15/624,468
- Filed: 2017-06-15
- Published: 2018-12-20
- Granted: 2019-08-06
- Earliest claimed: 2017-06-15
- Assignees: Akash Systems, Inc.
- Applicants: Akash Systems, Inc.
- Inventors: Felix Ejeckam; Tyrone D Mitchell, Jr.; Paul Saunier
- Web page: https://patentgrep.com/patent/US10374553B2

## CPC

- H03F 1/0205: {in transistor amplifiers}
- H03F 3/195: in integrated circuits
- H03F 3/213: in integrated circuits
- H03F 3/245: {with semiconductor devices only}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10W 44/206: {Wires}
- H10W 44/216: {Waveguides, e.g. strip lines}
- H10W 44/251: {for monolithic microwave integrated circuits [MMIC]}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/753: {between laterally-adjacent chips}
- H03F: AMPLIFIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.

## Claims

### Claim 1

An RF amplifier module comprising
a package having a package base, at least one RF amplifier chip attached to said package base, said RF amplifier chip comprising a substrate and at least one transistor comprising an epilayer overlying said substrate, wherein said substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity,
an RF power combiner chip attached to said package base, and a second layer of synthetic diamond at least partially disposed adjacent to said at least one transistor;
wherein said package base comprises synthetic diamond.

### Claim 2 (depends on 1)

The RF amplifier module of claim 1, wherein said substrate is characterized by a thickness between 50 μm and 300 μm.

### Claim 3 (depends on 1)

The RF amplifier module of claim 1, wherein said average value of thermal conductivity is greater than 1000 W/mK.

### Claim 4 (depends on 1)

The RF amplifier module of claim 1, wherein said transistor is an AlGaN/GaN high-electron mobility transistor.

### Claim 5 (depends on 1)

The RF amplifier module of claim 1, wherein said epilayer comprises a two-dimensional electron gas layer positioned no further than 150-nm from said substrate.

### Claim 6 (depends on 1)

The RF amplifier module of claim 1, further comprising a multiplicity of parallel transistor gates disposed on said transistor, wherein an average separation between said gates in the direction perpendicular to said gates is less than 25 μm.

### Claim 7

An RF amplifier module comprising: a package having a package base,
at least one RF amplifier chip attached to said package base, said RF amplifier chip comprising a substrate and at least one transistor disposed in an epilayer overlying said substrate, and
an RF power combiner chip attached to said package base, wherein a first layer of synthetic diamond is at least partially disposed on top of said at least one transistor; and
wherein said package base comprises synthetic diamond.

### Claim 8 (depends on 7)

The RF amplifier module of claim 7, wherein said substrate is characterized by a thickness between 50 μm and 300 μm.

### Claim 9 (depends on 7)

The RF amplifier module of claim 7, wherein said first layer of synthetic diamond is characterized by an average value of thermal conductivity greater than 1000 W/mK.

### Claim 10 (depends on 7)

The RF amplifier module of claim 7, wherein said epilayer comprises a two-dimensional electron gas layer positioned no further than 150-nm from said substrate.

### Claim 11 (depends on 7)

The RF amplifier module of claim 7, wherein said transistor is an AlGaN/GaN high-electron mobility transistor.

### Claim 12 (depends on 7)

The RF amplifier module of claim 7, further comprising a multiplicity of parallel transistor gates disposed on said transistor, wherein an average separation between said gates in the direction perpendicular to said gates is less than 25 μm.

### Claim 13

A high-power RF transmitter comprising:
a system housing,
at least one RF amplifier module comprising:
a package,
at least one input port, at least one output port,
at least one RF amplifier chip attached to said package, said RF amplifier chip comprising at least one transistor comprising an epilayer overlying a substrate, wherein said substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity, and wherein said RF amplifier chip comprises a second layer of synthetic diamond disposed adjacent to said at least one transistor,
an RF power combiner coupled to said output port, and
a heat conducting element.

### Claim 14 (depends on 13)

The RF transmitter module of claim 13, wherein said substrate is characterized by a thickness between 50 μm and 300 μm.

### Claim 15 (depends on 13)

The RF transmitter module of claim 13, wherein said average diamond thermal conductivity is greater than 1000 W/mK.

### Claim 16 (depends on 13)

The RF transmitter module of claim 13, wherein said epilayer comprises a layer comprising an alloy of aluminum, gallium, and nitrogen.

### Claim 17 (depends on 13)

The RF transmitter module of claim 13, wherein said RF power combiner comprises an electromagnetic waveguide.

### Claim 18 (depends on 13)

The RF amplifier module of claim 13, wherein said transistor is an AlGaN/GaN high-electron mobility transistor.

### Claim 19 (depends on 13)

The RF amplifier module of claim 13, further comprising a multiplicity of parallel transistor gates disposed on said transistor, wherein an average separation between said gates in the direction perpendicular to said gates is less than 25 μm.

### Claim 20 (depends on 13)

The RF amplifier module of claim 13, wherein said epilayer comprises a two-dimensional electron gas layer positioned no further than 150 nm from said substrate.