# US 10,374,439 B2 · Circuit arrangement having charge storage units > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,439 B2 - Document ID: US10374439B2 - Status: Granted - Kind: B2 - Application number: 15/005,432 - Filed: 2016-01-25 - Published: 2016-07-28 - Granted: 2019-08-06 - Earliest claimed: 2015-01-26 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Reinhold Bayerer; Johannes Teigelkoetter - Web page: https://patentgrep.com/patent/US10374439B2 ## CPC - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02J 7/50: acting upon multiple batteries simultaneously or sequentially - H02J 7/345: {using capacitors as storage or buffering devices} - H02M 1/327: {against abnormal temperatures} - H02M 5/458: using semiconductor devices only - H02M 7/06: using discharge tubes without control electrode or semiconductor devices without control electrode - H02M 7/5387: in a bridge configuration - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H02J: ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY ## Abstract A circuit arrangement includes a power semiconductor circuit, a first charge storage unit and a second charge storage unit. The first charge storage unit has first and second terminals, the second charge storage unit has first and second terminals, and the power semiconductor circuit has first and second terminals. The power semiconductor circuit also has a first semiconductor component and a second semiconductor component, the load paths of which are electrically connected in series between the first and second terminals of the power semiconductor circuit. A first connection electrically connects the first terminal of the first charge storage unit to the first terminal of the second charge storage unit, and a second connection electrically connects the second terminal of the first charge storage unit to the second terminal of the second charge storage unit. A magnetic core is electromagnetically coupled to the first and/or second connections. ## Claims ### Claim 1 A circuit arrangement, comprising: a power semiconductor circuit having a first terminal and a second terminal, and a first semiconductor component and a second semiconductor component having load paths which are electrically connected in series between the first terminal and the second terminal; a first charge storage unit having a first terminal and a second terminal; and a second charge storage unit having a first terminal and a second terminal; a first connection electrically connecting the first terminal of the first charge storage unit to the first terminal of the second charge storage unit to provide a galvanic path between the first terminal of the first charge storage unit and the first terminal of the second charge storage unit; a second connection electrically connecting the second terminal of the first charge storage unit to the second terminal of the second charge storage unit to provide a galvanic path between the second terminal of the first charge storage unit and the second terminal of the second charge storage unit; and a magnetic core electromagnetically coupled to the first connection and/or the second connection. ### Claim 2 (depends on 1) The circuit arrangement of claim 1, wherein a distance between the magnetic core and the first connection is less than 5 mm. ### Claim 3 (depends on 1) The circuit arrangement of claim 1, wherein the magnetic core has a feed-through, through which the first connection and/or the second connection is fed through. ### Claim 4 (depends on 1) The circuit arrangement of claim 1, wherein the magnetic core or a section of the magnetic core is a closed ring through which the first connection and/or the second connection is fed through. ### Claim 5 (depends on 1) The circuit arrangement of claim 1, wherein the magnetic core or a continuous section of the magnetic core is a U-shaped core or as an E-shaped core. ### Claim 6 (depends on 1) The circuit arrangement of claim 1, wherein the first connection and/or the second connection has no complete turn surrounding the magnetic core. ### Claim 7 (depends on 1) The circuit arrangement of claim 1, wherein the magnetic core has a relative magnetic permeability of at least 500 at a temperature of 105° C. ### Claim 8 (depends on 1) The circuit arrangement of claim 1, wherein the first charge storage unit comprises one capacitor or a plurality of capacitors electrically connected in parallel with one another. ### Claim 9 (depends on 1) The circuit arrangement of claim 1, wherein the magnetic core has an additional winding different than the first connection and/or the second connection. ### Claim 10 (depends on 9) The circuit arrangement of claim 9, wherein the additional winding has at least two turns, each of which is wound around the magnetic core. ### Claim 11 (depends on 9) The circuit arrangement of claim 9, wherein the additional winding is part of a closed current loop having a total electrical resistance of at least 0.3 Ohm. ### Claim 12 (depends on 9) The circuit arrangement of claim 9, wherein the additional winding is part of a closed current loop haying N2 turns and a total electrical resistance R which satisfies one of the following criteria: R ≈ 2 · N ⁢ ⁢ 2 · LS ⁢ ⁢ 1 + LS ⁢ ⁢ 2 C ⁢ ⁢ 1 ( a ) N ⁢ ⁢ 2 · LS ⁢ ⁢ 1 + LS ⁢ ⁢ 2 C ⁢ ⁢ 1 < R < 2 · N ⁢ ⁢ 2 · LS ⁢ ⁢ 1 + LS ⁢ ⁢ 2 C ⁢ ⁢ 1 ( b ) R > 2 · N ⁢ ⁢ 2 · LS ⁢ ⁢ 1 + LS ⁢ ⁢ 2 C ⁢ ⁢ 1 ( c ) where LS1 is a leakage inductance of the first connection, LS2 is a leakage inductance of the second connection, and C1 is a capacitance of the first charge storage unit. ### Claim 13 (depends on 1) The circuit arrangement of claim 1, wherein the second charge storage unit comprises one capacitor or a plurality of capacitors electrically connected in parallel with one another. ### Claim 14 (depends on 13) The circuit arrangement of claim 13, wherein the second charge storage unit has a capacitance of at least 500 μF. ### Claim 15 (depends on 13) The circuit arrangement of claim 13, wherein a capacitance of the second charge storage unit is at least 10 times a capacitance of the first charge storage unit. ### Claim 16 (depends on 1) The circuit arrangement of claim 1, wherein the second charge storage unit comprises one rechargeable battery or a plurality of rechargeable batteries electrically connected in parallel with one another. ### Claim 17 (depends on 1) The circuit arrangement of claim 1, wherein: the first connection has a leakage inductance LS1; the second connection has a leakage inductance LS2; and a total leakage inductance LS1+LS2 of the first and second connections is greater than 2.5 times the leakage inductance LS2 of the second charge storage unit. ### Claim 18 (depends on 1) The circuit arrangement of claim 1, further comprising: a third connection electrically connecting the first terminal of the first charge storage unit to the first terminal of the power semiconductor circuit to provide a galvanic path between the first terminal of the first charge storage unit and the first terminal of the power semiconductor circuit; and a fourth connection electrically connecting the second terminal of the first charge storage unit to the second terminal of the power semiconductor circuit to provide a galvanic path between the second terminal of the first charge storage unit and the second terminal of the power semiconductor circuit. ### Claim 19 (depends on 18) The circuit arrangement of claim 18, wherein: the first connection has a leakage inductance LS1; the second connection has a leakage inductance LS2; the third connection has a leakage inductance LS3; the fourth connection has a leakage inductance LS4; and a ratio (LS3+LS4)/(LS1+LS2) between a total leakage inductance LS3+LS4 of the third and fourth connections and a total leakage inductance LS1+LS2 of the first and second connections is at least 2.5. ### Claim 20 (depends on 18) The circuit arrangement of claim 18, wherein: the first connection has a leakage inductance LS1; the second connection has a leakage inductance LS2; the third connection has a leakage inductance LS3; the fourth connection has a leakage inductance LS4; and a total leakage inductance LS1+LS2 of the first and second connections is greater than 2.5 times the sum of LS3, LS4 and a leakage inductance of the second charge storage unit.