# US 10,374,414 B2 · Semiconductor power module and power conversion apparatus using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,414 B2 - Document ID: US10374414B2 - Status: Granted - Kind: B2 - Application number: 14/757,466 - Filed: 2015-12-23 - Published: 2016-06-30 - Granted: 2019-08-06 - Earliest claimed: 2014-12-24 - Assignees: Hitachi Power Semiconductor Device, Ltd. - Applicants: Hitachi Power Semiconductor Device, Ltd. - Inventors: Keisuke Horiuchi; Daisuke Kawase; Masamitsu Inaba; Katsuaki Saito - Web page: https://patentgrep.com/patent/US10374414B2 ## CPC - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H02H 7/122: for inverters, i.e. DC/AC converters - H10D 12/411: {Insulated-gate bipolar transistors [IGBT]} - H10W 70/658: {for devices provided for in groups H10D8/00 - H10D48/00} - H10W 76/15: Containers comprising an insulating or insulated base - H10W 90/00: Package configurations - H02M 1/0038: {Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control} - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02M 7/5387: in a bridge configuration - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module. ## Claims ### Claim 1 A semiconductor power module comprising: a positive electrode terminal; a negative electrode terminal; an alternating current terminal; an emitter signal terminal; a gate signal terminal; and a base on which the positive electrode terminal, the negative electrode terminal, the alternating current terminal, the emitter signal terminal, and the gate signal terminal are mounted, wherein at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal includes two parts extending toward an interior portion of the semiconductor power module in a common direction, wherein the emitter signal terminal and the gate signal terminal include a adjacently parallel portions formed by respective parts of the emitter signal terminal and the gate signal terminal at said interior portion of the semiconductor power module so as to conduct parallel currents in the adjacently parallel portions, and wherein the emitter signal terminal and the gate signal terminal extend along a plane of the base at said interior portion of the semiconductor power module and the adjacently parallel portions are so placed as to be sandwiched between the two parts of at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal at said interior portion of the semiconductor power module. ### Claim 2 (depends on 1) The semiconductor power module according to claim 1, wherein the two parts are respectively formed of two different components. ### Claim 3 (depends on 2) The semiconductor power module according to claim 2, wherein the alternating current terminal is disposed on an end opposite an end where the positive electrode terminal and the negative electrode terminal are disposed. ### Claim 4 (depends on 3) The semiconductor power module according to claim 3, wherein a control terminal is disposed between an area where the positive electrode terminal and the negative electrode terminal are disposed and an area where the alternating current terminal is disposed. ### Claim 5 (depends on 3) The semiconductor power module according to claim 3, wherein the base, the gate signal terminal, and the emitter signal terminal are so arranged that the plane of the base and planes of the gate signal terminal and the emitter signal terminal in the adjacently parallel portions are orthogonal to each other. ### Claim 6 (depends on 3) The semiconductor power module according to claim 3, wherein an insulator is disposed in at least either of between the positive electrode terminal and the negative electrode terminal in the adjacently parallel portions and between the emitter signal terminal and the gate signal terminal. ### Claim 7 A power conversion apparatus comprising: a plurality of semiconductor power modules having a substantially rectangular shape arranged in parallel such that long sides of the plurality of semiconductor power modules are adjacent, wherein each said semiconductor power modules are semiconductor power module comprises: a positive electrode terminal; a negative electrode terminal; an alternating current terminal; an emitter signal terminal; a gate signal terminal; and a base on which the positive electrode terminal, the negative electrode terminal, the alternating current terminal, the emitter signal terminal, and the gate signal terminal are mounted, wherein at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal includes two parts extending toward an interior portion of the semiconductor power module in a common direction, wherein the emitter signal terminal and the gate signal terminal include a adjacently parallel portions formed by respective parts of the emitter signal terminal and the gate signal terminal at said interior portion of the semiconductor power module so as to conduct parallel currents in the adjacently parallel portions, and wherein the emitter signal terminal and the gate signal terminal extend along a plane of the base at said interior portion of the semiconductor power module and the adjacently parallel portions are so placed as to be sandwiched between the two parts of at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal at said interior portion of the semiconductor power module. ### Claim 8 (depends on 7) The power conversion apparatus according to claim 7, wherein a capacitor module is is disposed on a side of the positive electrode terminal of each said semiconductor power module, and wherein a gate wiring circuit board is provided directly over the plurality of semiconductor power modules.